KTD600K-Y-U/PH

SEMICONDUCTOR KTD600K TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS A B D C E FEATURES F High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. G Complementary to KTB631K. H DIM A B C D E F G H J K L M N O P J K MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5 V IC 1 ICP 2 Collector Current Collector Power Ta=25 Dissipation Tc=25 L Junction Temperature Storage Temperature Range M 1 2 3 TO-126 W 8 Tj 150 Tstg -55 150 P 1. EMITTER 2. COLLECTOR 3. BASE A 1.5 PC O N MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 Φ3.2 + 3.5 _ 0.3 11.0 + 2.9 MAX 1.0 MAX 1.9 MAX _ 0.15 0.75 + _ 0.5 15.50 + _ 0.1 2.3 + _ 0.15 0.65 + 1.6 3.4 MAX ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut of Current ICBO VCB=50V, IE=0 - - 1 A Emitter Cut of Current IEBO VEB=4V, IC=0 - - 1 A Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 120 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 120 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 5 - - V DC Current Gain Gain Bandwidth Product hFE(1) Note VCE=5V, IC=50mA 100 - 320 hFE(2) VCE=5V, IC=500mA 20 - - fT VCE=10V, IC=50mA - 130 - MHz VCB=10V, f=1MHz, IE=0 - 20 - pF Cob Output Capacitance Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - 0.15 0.4 V Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA - 0.85 1.2 V - 100 - - 500 - - 700 - Turn-on Time Switching Time Turn-off Time ton toff 1 20u sec 1Ω I B1 I B2 24Ω 100Ω 1uF Storage Time Note : hFE(1) Classification 2003. 7. 24 tstg nS 1uF -2V VCE =12V I C =10I B1 =-10I B2 =500mA 12V Y:100 200, GR:160 320 Revision No : 3 1/2 KTD600K VCE(sat) - I C COLLECTOR CURRENT I C (A) 1.6 Tc=25 C 1.4 20 1.2 15 12 1.0 10 0.8 8 0.6 4 0.4 6 2 0.2 0 COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (V) I C - VCE IB =0mA 1 0 2 3 4 5 6 1.0 I C /I B =10 0.5 0.3 0.1 0.05 0.03 0.01 1 COLLECTOR-EMITTER VOLTAGE V CE (V) 300 1k 3k 0.8 Pc - Ta 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 BASE-EMITTER VOLTAGE V BE (V) 1.2 200 f=1MHz 100 COLLECTOR DISSIPATION PC (W) COLLECTOR CURRENT I C (A) OUTPUT CAPACITANCE Cob (pF) 100 1.0 50 10 8 inf ini te he at sin k 6 4 2 0 30 No Heat Sink 0 20 40 60 80 100 120 140 160 AMBIENT TMMPERATURE Ta ( C) 10 5 0.05 1 3 10 30 100 COLLECTOR-BASE VOLTAGE V CE (V) ASO 500 COLLECTOR CURRENT I C (A) h FE - I C DC CURRENT GAIN hFE 30 VCE =5V 1.2 C ob - VCB VCE =5V 300 100 50 30 10 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) 2003. 7. 24 10 COLLECTOR CURRENT I C (mA) VBE - I C 1.4 3 Revision No : 3 5k 5 3 10mS 1mS 1 100µS 0.5 0.3 DC 0.1 0.05 0.03 0.01 0.005 1 10 100 COLLECTOR-EMITTER VOLTAGE V CE (V) 2/2