KTH2369A

SEMICONDUCT OR TECHNICAL DATA HIGH SPEED SWITCHING APPLICATION. FEATURES ・High Frequency Characteristics ・Excellent Switching Characteristics. : fT=500MHz(Min.) (VCE=10V, f=100MHz, IC=10mA). B KTH2369/A EPITAXIAL PLANAR NPN TRANSISTOR C A N K D E G MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25℃) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 40 15 4.5 500 625 150 -55～150 UNIT V V M H F F V mA mW ℃ ℃ L 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. COLLECTOR 2. BASE 3. EMITTER TO-92 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage KTH2369/A KTH2369 DC Current * Gain KTH2369A KTH2369 KTH2369A Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Storage Time Turn-on Time Turn-off Time * VCE(sat) VBE(sat) fT Cob tstg ton toff hFE SYMBOL ICBO V(BR)CBO V(BR)CEO V(BR)EBO TEST CONDITION VCB=20V, IE=0 VCB=20V, IE=0, Ta=125℃ IC=10μ IE=0 A, IE=10mA, IB=0 IE=10μ IC=0 A, IC=10mA, VCE=1.0V IC=10mA, VCE=1.0V, Ta=-55℃ IC=10mA, VCE=0.35V, Ta=-55℃ IC=100mA, VCE=2.0V IC=100mA, VCE=1.0V IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA IC=10mA, VCE=10V, f=100MHz VCB=5.0V, IE=0, f=1.0MHz IC=100mA, IB1=-IB2=10mA, VCC=10V VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=-1.5mA IC=10mA, IB1=3.0mA IB2=-1.5mA, VCC=3.0V MIN. 40 15 4.5 40 20 20 20 20 0.70 500 TYP. MAX. 0.4 30 120 0.25 0.85 4.0 13 12 15 nS V V MHz pF V UNIT μ A Note : *Pulse Test : Pulse Width≦300μ Duty Cycle≦2.0% S, 2002. 6. 17 Revision No : 2 1/2 KTH2369/A h FE - I C VCE =1V VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0.5 0.4 0.3 0.2 0.1 0 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) COMMON EMITTER I C /I B =10 200 DC CURRENT GAIN h FE 150 Ta=125 C 100 Ta=25 C Ta=-40 C Ta=125 C Ta=25 C Ta=-40 C 50 0 0.01 0.1 1 10 100 COLLECTOR CURRENT I C (mA) 1.5 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 1.3 1.1 0.9 0.7 0.5 0.3 COLLECTOR OUTPUT CAPACITANCE Cob(pF) COLLECTOR INPUT CAPACITANCE C ib(pF) VBE(sat) - I C COMMON EMITTER I C /I B =10 C ob - V CB , C ib - V EB 5.0 4.0 3.0 2.0 1.0 0 0.1 0.3 1.0 3.0 3 10 0 50 COLLECTOR-BASE VOLTAGE V CB (V) EMITTER-BASE VOLTAGE V EB (V) Cobo COMMON EMITTER f=1MHz Ta=25 C C ibo Ta=-40 C Ta=25 C Ta=125 C 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) I C - V BE COMMON EMITTER VCE =1V P C - Ta COLLECTOR POWER DISSIPATION P C (W) 1.0 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 COLLECTOR CURRENT IC (mA) 30 10 5 3 Ta=1 25 C Ta=2 5C 0.5 0.3 0.1 0 0.2 0.4 0.6 BASE-EMITTER VOLTAGE V BE (V) Ta=-4 0 1 0.8 C AMBIENT TEMPERATURE Ta ( C) 2002. 6. 17 Revision No : 2 2/2