KTK5132E

SEMICONDUCT OR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode. KTK5132E N CHANNEL MOS FIELD EFFECT TRANSISTOR E B 2 D 3 DIM A B C D E G H J MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10 0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05 A G 1 H MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range SYMBOL VDS VGSS ID PD Tch Tstg RATING 30 ±20 100 100 150 -55～150 UNIT V V mA mW ℃ ℃ 1. SOURCE 2. GATE 3. DRAIN J C ESM EQUIVALENT CIRCUIT D Marking Type Name G KB S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Gate Leakage Current Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Forward Transfer Admittance Drain-Source ON Resistance Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Time Turn-on Time Turn-off Time SYMBOL IGSS V(BR)DSS IDSS Vth |Yfs| RDS(ON) Ciss Crss Coss ton toff TEST CONDITION VGS=±16V, VDS=0V ID=100μ VGS=0V A, VDS=30V, VGS=0V VDS=3V, ID=0.1mA VDS=3V, ID=10mA ID=10mA, VGS=2.5V VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz VDD=5V, ID=10mA, VGS=0～5V MIN. 30 0.5 25 TYP. 4 8.5 3.3 9.3 50 180 MAX. ±1 1 1.5 7 UNIT μ A V μ A V mS Ω pF pF pF nS nS 2002. 6. 17 Revision No : 0 1/3 KTK5132E I D - V DS I D - V DS 100 DRAIN CURRENT I D (mA) 80 60 40 20 0 0 2 4 6 8 10 12 DRAIN-SOURCE VOLTAGE V DS (V) 2.5V 2.2V COMMON SOURCE Ta=25 C (LOW VOLTAGE REGION) 1.0 DRAIN CURRENT ID (mA) 0.8 0.6 1.1V 2.5V 1.2V 1.15V COMMON SOURCE Ta=25 C 2.0V 1.8V 1.6V 1.4V VGS =1.2V 0.4 0.2 0 0 0.1 0.2 0.3 0.4 1.05V 1.0V VGS =0.9V 0.5 0.6 DRAIN-SOURCE VOLTAGE V DS (V) I DR - VDS DRAIN REVERSE CURRENT I DR (mA) 100 VGS =0 Ta=25 C D G S I DR I D - VGS 100 DRAIN CURRENT I D (mA) 30 10 C 30 10 3 1 0.3 0.1 0.03 0.01 0 -0.4 -0.8 COMMON SOURCE COMMON SOURCE V DS =3V 3 1 0.3 0.1 0.03 0.01 0 Ta= 100 Ta=25 C Ta=-25 C -1.2 -1.6 1 2 3 4 5 DRAIN-SOURCE VOTAGE V DS (V) GATE-SOURCE VOTAGE VGS (V) Y fs FORWARD TRANSFER ADMITTANCE Y (mS) 300 COMMON SOURCE V DS =3V Ta=25 C - ID 100 50 CAPACITANCE C (pF) 30 C oss C iss C - V DS COMMON SOURCE VGS =0 f=1MHz Ta=25 C 100 50 30 fs 10 5 3 C rss 10 5 1 3 5 10 30 50 100 DRAIN CURRENT I D (mA) 1 0.1 0.3 0.5 1 3 5 10 20 DRAIN-SOURCE VOLTAGE V DS (V) 2002. 6. 17 Revision No : 0 2/3 KTK5132E VDS(ON) - I D 2 DRAIN-SOURCE ON VOLTAGE VDS(ON) (V) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 1 3 5 10 30 50 100 10 1 3 5 COMMON SOURCE VGS =2.5V Ta=25 C t - ID 1K SWITCHING TIME t (ns) 500 300 t on tr 100 50 30 50Ω 5V V IN 0 10µs ID VOUT RL t off tf VDD =5V D.U. < 1% = VIN :t r , t f < 5ns (Z OUT =50Ω) COMMON SOURCE Ta=25 C VDD 10 30 50 100 DRAIN CURRENT I D (mA) DRAIN CURRENT I D (mA) P D - Ta DRAIN POWER DISSIPATION PD (mW) 150 100 50 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) SWITCHING TIME TEST CIRCUIT ID 5V VIN 0 10µs VIN RL 50Ω VOUT VDD =5V D.U. < 1% = V IN :t r , t f < 5ns (Z OUT =50Ω) COMMON SOURCE Ta=25 C VIN 5V 10% 90% 0 V DD VOUT V DS (ON) 10% 90% tr t on t off tf VDD 2002. 6. 17 Revision No : 0 3/3