KTK5164U

SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode. KTK5164U N CHANNEL MOS FIELD EFFECT TRANSISTOR E M B M 2 D 3 1 MAXIMUM RATINGS (Ta=25℃) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range SYMBOL VDS VGSS ID PD Tch Tstg RATING 60 ±20 200 100 150 -55～150 UNIT V V mA mW ℃ ℃ H N K N DIM A B C D E G H J K L M N MILLIMETERS _ 2.00 + 0.20 _ 1.25+ 0.15 _ 0.90 + 0.10 0.3+0.10/-0.05 _ 2.10 + 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.42 + 0.10 0.10 MIN A J C L G 1. SOURCE 2. GATE 3. DRAIN USM EQUIVALENT CIRCUIT D Marking Lot No. G Type Name KF S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Gate Leakage Current Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Forward Transfer Admittance Drain-Source ON Resistance Input Capacitance Reverse Transfer Capacitance Output Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time tf toff SYMBOL IGSS V(BR)DSS IDSS Vth |Yfs| RDS(ON) Ciss Crss Coss tr ton TEST CONDITION VGS=±16V, VDS=0V ID=100μ VGS=0V A, VDS=60V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=50mA ID=50mA, VGS=2.5V VDS=10V, VGS=0V, f=1MHz VDS=10V, VGS=0V, f=1MHz VDS=10V, VGS=0V, f=1MHz 10V 0 10µs VIN 50Ω RL I D =100mA V OUT MIN. 60 0.5 100 - TYP. 1.5 55 13 40 8 14 35 75 MAX. ±1 1 1.5 2 65 18 50 - UNIT μ A V μ A V mS Ω pF pF pF nS - V IN :t r , t f < 5ns D.U. < 1% (Z OUT =50Ω) = V DD = 30V 2008. 8. 11 Revision No : 0 1/3 KTK5164U I D - VDS I D - V DS 200 DRAIN CURRENT I D (mA) 160 120 1.8V 2.2V 2.0V COMMON SOURCE Ta=25 C (LOW VOLTAGE REGION) 200 DRAIN CURRENT I D (mA) 160 120 80 40 0 20 0 0.4 0.8 1.2 2.2V 2.0V COMMON SOURCE Ta=25 C 80 40 0 0 4 8 12 1.8V 1.6V VGS =1.4V 1.6V VGS =1.4V 16 1.6 2.0 DRAIN-SOURCE VOLTAGE V DS (V) GATE-SOURCE VOLTAGE VDS (V) Yfs FORWARD TRANSFER ADMITTANCE Yfs (mS) 1K COMMON SOURCE VDS =10V Ta=25 C - ID I D - V GS 100 COMMON SOURCE VDS =10V Ta=25 C DRAIN CURRENT I D (mA) 10 100 10 100 1 10 1 DRAIN CURRENT I D (mA) 0.1 1 2 3 4 5 GATE-SOURCE VOTAGE VGS (V) 500 300 CAPACITANCE C (pF) DRAIN-SOURCE ON VOLTAGE V DS(ON) (mV) C - V DS COMMON SOURCE VGS =0 f=1MHz Ta=25 C C iss Coss C rss VDS(ON) - I D 300 COMMON SOURCE VGS =0 f=1MHz Ta=25 C 100 50 30 100 50 30 10 5 3 0.1 0.3 0.5 1 3 5 10 10 5 10 30 50 100 300 30 50 DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT I D (mA) 2008. 8. 11 Revision No : 0 2/3 KTK5164U I DR - VDS DRAIN REVERSE CURRENT I DR (A) 2 1 0.3 0.1 0.03 0.01 COMMON SOURCE VGS =0 Ta=25 C D G S I DR t - ID 1K SWITCHING TIME t (ns) 300 100 30 10 3 1 0.3 0.01 ID t off tf t on VOUT RL tr D.U. < 1% = VIN :t r , t f < 5ns (Z OUT =50Ω) COMMON SOURCE Ta=25 C 10µs 50Ω 10V 0 V IN VDD 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 0.03 0.05 0.1 0.3 0.5 DRAIN-SOURCE VOTAGE V DS (V) DRAIN CURRENT I D (mA) P D - Ta DRAIN POWER DISSIPATION PD (mW) 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 2008. 8. 11 Revision No : 0 3/3