KTK999S

SEMICONDUCTOR TECHNICAL DATA FOR FM AUDIO TUNER FEATURES High Forword Transter Admittance Low Noise Gain Controlled Amplifier 2 A G H 1 L KTK999S N Channel MOSFET E B L DIM A D B C D E G H J K P P L M N P 3 MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N K M 1. DRAIN Maximum Ratings (Ta=25 ) SYMBOL VDS ID ) PD TCH TSTG RATING 20 30 200 150 -55~150 UNIT V mA mW 2. GATE 3. SOURCE CHARACTERISTIC Drain Source Voltage Drain Current Drain Power Dissipation (TS 76 Channel Temperature Storage Temperature range SOT-23 Marking Lot No. Type Name M2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Drain Source Breakdown Voltage Gate-Source Breakdown Voltage Gate Leakage Currnet Drain Current Gate Source Pinch Voltage Forward Transfer Admittance Input Capacitance Output Capacitance Power Gain Noise Figure SYMBOL V(BR)DSX V(BR)GSS IGSS IDSS VGS(OFF) yfs ) TEST CONDITIONS ID=10 A, VGS= -4V IGS= VGS= 10mA, VDS= 0 5A, VDS= 0 MIN 20 6.5 5 14 VDS=10V, ID=10mA, f= 10MHz VDS=10V, ID=10mA, f= 45MHz 0.9 27 2.1 dB TYP 10 -0.8 20 2.5 MAX 12 50 16 -1.5 pF UNIT V V A mA V mS VDS=10V, VGS= 0 VDS=10V, ID=20 A VDS=10V, ID=10mA Ciss Coss GP NF 2007. 4. 2 Revision No : 0 J 1/2 KTK999S ID - VDS 18 30 0.3V 0.2V 0.1V 0V -0.1V -0.2V -0.3V -0.4V ID - VGS DRAIN CURRENT ID (mA) 16 14 12 10 8 6 4 2 0 0 5 10 DRAIN CURRENT ID (mA) 20 25 20 15 10 5 0 15 -1 0 1 DRAIN-SOURCE VOLTAGE VDS (V) GATE-SOURCE VOLTAGE VGS (V) yfs - VGS FORWARD TRANSFER ADMITTANCE yfs (mS) 30 25 20 15 10 5 0 -1 -0.5 0 0.5 1.0 1.5 3 Ciss - VGS INPUT CAPACITANCE Ciss (pF) 2 1 0 -2 -1 0 1 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) Coss - VDS 3 OUTPUT CAPACITANCE Coss (pF) 2 1 0 -2 -1 0 1 DRAIN-SOURCE VOLTAGE VDS (V) 2007. 4. 2 Revision No : 0 2/2