KTN2222AE

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. H 2 KTN2222AE EPITAXIAL PLANAR NPN TRANSISTOR E B D 3 Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. Complementary to KTN2907AE. 1 DIM A B C D E G H J MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10 0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05 A G J MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 75 40 6 600 100 150 -55 150 UNIT V V V mA mW C 1. EMITTER 2. BASE 3. COLLECTOR ESM Collector Power Dissipation (Ta=25 ) Junction Temperature Storage Temperature Range Marking ZG 2004. 1. 29 Revision No : 0 1/4 KTN2222AE ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * SYMBOL ICEX ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) hFE(2) DC Current Gain * hFE(3) hFE(4) hFE(5) Collector-Emitter Saturation Voltage * VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib hie TEST CONDITION VCE=60V, VEB(OFF)=3V VCB=60V, IE=0 VEB=3V, IC=0 IC=10 A, IE=0 IC=10mA, IB=0 IE=10 A, IC=0 IC=0.1mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IC=150mA, VCE=10V IC=500mA, VCE=10V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IE=20mA, VCB=20V, f=31.8MHz IC=100 A, VCE=10V, VCC=30V, VBE(OFF)=0.5V IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=-IB2=15mA MIN. 75 40 6 35 50 75 100 40 0.6 300 2 0.25 50 75 5 25 TYP. MAX. 10 0.01 10 300 0.3 V 1 1.2 V 2.0 8 25 8 k 1.25 8 x10-4 4 300 375 35 200 150 4 10 25 nS 225 60 pS dB MHz pF pF UNIT nA A nA V V V Base-Emitter Saturation Voltage * Transition Frequency Collector Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio hre Small-Singal Current Gain hfe Collector Output Admittance Collector-Base Time Constant Noise Figure Delay Time Rise Time Switching Time Storage Time Fall Time * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. hoe Cc rbb' NF td tr tstg tf 2004. 1. 29 Revision No : 0 2/4 KTN2222AE I C - V CE COLLECTOR CURRENT I C (mA) 1000 800 600 400 200 COMMON EMITTER Ta=25 C 20mA 18mA 16mA 14mA 12mA 10mA 8mA 6mA 4mA I B =2mA h FE - I C 1K DC CURRENT GAIN h FE 500 300 Ta=75 C Ta=25 C Ta=-25 C VCE =1V VCE =2V VCE =10V 100 50 30 0 0.4 0.8 1.2 1.6 1.8 10 0.5 1 3 10 30 100 300 1K COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0.6 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER I C /I B =10 Ta=25 C VBE(sat) - I C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.5 1 3 10 30 100 300 1k Ta=-25 C Ta=25 C Ta=75 C COMMON EMITTER I C /I B =10 VBE(sat) 0.4 0.2 VCE(sat) 0 0.5 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - V BE TRANSITION FREQUENCY f T (MHz) 500 300 COLLECTOR CURRENT I C (mA) 100 30 10 3 1 0.3 0.1 0.05 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Ta=75 C fT - IC 1000 Ta=25 C VCE =10V COMMON EMITTER VCE =10V 300 100 Ta= 25 C Ta=-25 C 30 10 -1 -3 -10 -30 -100 -300 -1k (mA) -3k COLLECTOR CURRENT I C BASE-EMITTER VOLTAGE VBE (V) 2004. 1. 29 Revision No : 0 3/4 KTN2222AE COLLECTOR OUTPUT CAPACITANCE Cob (pF) COLLECTOR INPUT CAPACITANCE Cib (pF) Cob - V CB Cib - VEB COMMON EMITTER f=1MHz, Ta=25 C Pc - Ta COLLECTOR POWER DISSIPATION PC (mW) 200 100 30 Cib 150 10 100 3.0 Cob 50 1.0 -0.1 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) -1.0 -10 -100 -300 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) 2004. 1. 29 Revision No : 0 4/4