KTN2222S_12

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. A KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR L E B L : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. ・Complementary to the KTN2907S/2907AS. G ・Low Saturation Voltage 2 3 1 P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N H M MAXIMUM RATING (Ta=25℃) RATING CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25℃) Junction Temperature Storage Temperature Range SYMBOL KTN2222S KTN2222AS VCBO VCEO VEBO IC PC Tj Tstg 60 30 5 600 350 150 -55～150 75 40 6 V V V mA mW ℃ ℃ UNIT 1. EMITTER 2. BASE 3. COLLECTOR K SOT-23 Note : PC* : Package Mounted on 99.5% alumina 10×8×0.6mm. Marking Type Name Lot No. Lot No. ZB Type Name ZG MARK SPEC TYPE KTN2222S KTN2222AS MARK ZB ZG 1999. 5. 4 Revision No : 2 J D 1/5 KTN2222S/AS ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Collector Cut-off Current KTN2222AS Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * KTN2222AS KTN2222S KTN2222AS KTN2222S KTN2222AS KTN2222S KTN2222AS V(BR)CEO IE=10mA, IB=0 V(BR)CBO IC=10μ IE=0 A, KTN2222AS KTN2222S SYMBOL ICEX ICBO IEBO TEST CONDITION VCE=60V, VEB(OFF)=3V VCB=50V, IE=0 VCB=60V, IE=0 VEB=3V, IC=0 MIN. 60 75 30 40 V(BR)EBO hFE(1) KTN2222S KTN2222AS DC Current Gain * KTN2222S KTN2222AS KTN2222S Collector-Emitter Saturation Voltage * KTN2222AS KTN2222S KTN2222AS KTN2222S Base-Emitter Saturation Voltage * KTN2222AS KTN2222S KTN2222AS KTN2222S Transition Frequency KTN2222AS Collector Output Capacitance KTN2222S Input Capacitance KTN2222AS * Pulse Test : Pulse Width≦300μ Duty Cycle≦2%. S, Cib VEB=0.5V, IC=0, f=1.0MHz hFE(2) hFE(3) hFE(4) hFE(5) IE=10μ IC=0 A, IC=0.1mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IC=150mA, VCE=10V IC=500mA, VCE=10V 5 6 35 50 75 100 30 40 0.6 250 300 TYP. MAX. 10 0.01 0.01 10 V 300 0.4 0.3 V VCE(sat)2 IC=500mA, IB=50mA 1.6 1 1.3 1.2 V VBE(sat)2 IC=500mA, IB=50mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1.0MHz 2.6 2.0 MHz 8 30 pF 25 pF V V μ A nA UNIT nA VCE(sat)1 IC=150mA, IB=15mA VBE(sat)1 IC=150mA, IB=15mA fT Cob 1999. 5. 4 Revision No : 2 2/5 KTN2222S/AS ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Input Impedance KTN2222AS SYMBOL hie TEST CONDITION IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IE=20mA, VCB=20V, f=31.8MHz IC=100μ VCE=10V, A, Rg=1kΩ, f=1kHz VCC=30V, VBE(OFF)=0.5V IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=-IB2=15mA MIN. 2 0.25 50 75 5 25 TYP. MAX. 8 1.25 8 x10-4 4 300 375 μ Ω 35 200 150 4 10 25 225 60 nS kΩ UNIT Voltage Feedback Ratio KTN2222AS hre Small-Singal Current Gain KTN2222AS hfe Collector Output Admittance Collector-Base Time Constant Noise Figure KTN2222AS KTN2222AS KTN2222AS Delay Time Rise Time hoe Cc・rbb' NF td tr tstg tf pS dB Switching Time Storage Time Fall Time 1999. 5. 4 Revision No : 2 3/5 KTN2222S/AS I C - V CE COLLECTOR CURRENT I C (mA) 1000 800 600 400 200 COMMON EMITTER Ta=25 C 20mA 18mA 16mA 14mA 12mA 10mA 8mA 6mA 4mA I B =2mA h FE - I C 1K DC CURRENT GAIN h FE 500 300 Ta=75 C Ta=25 C Ta=-25 C VCE =1V VCE =2V VCE =10V 100 50 30 0 0.4 0.8 1.2 1.6 1.8 10 0.5 1 3 10 30 100 300 1K COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0.6 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER I C /I B =10 Ta=25 C VBE(sat) - I C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.5 1 3 10 30 100 300 1k Ta=-25 C Ta=25 C Ta=75 C COMMON EMITTER I C /I B =10 VBE(sat) 0.4 0.2 VCE(sat) 0 0.5 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - V BE COMMON EMITTER VCE =10V fT - IC TRANSITION FREQUENCY f T (MHz) 1000 Ta=25 C VCE =10V 500 300 COLLECTOR CURRENT I C (mA) 100 30 10 3 1 0.3 0.1 0.05 300 Ta=75 C 100 Ta= 25 C Ta=-25 C 30 10 1 3 10 30 100 300 1k 3k COLLECTOR CURRENT I C (mA) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 BASE-EMITTER VOLTAGE VBE (V) 1999. 5. 4 Revision No : 2 4/5 KTN2222S/AS COLLECTOR OUTPUT CAPACITANCE Cob (pF) COLLECTOR INPUT CAPACITANCE Cib (pF) Cob - V CB Cib - V EB COLLECTOR POWER DISSIPATION PC (mW) 100 COMMON EMITTER f=1MHz, Ta=25 C Pc - Ta 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) (1) MOUNTED ON 99.5% ALUMINA 10x8x0.6mm (2) Ta=25 C 30 Cib (1) 10 (2) 3.0 Cob 1.0 0.1 1.0 10 100 300 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) 1999. 5. 4 Revision No : 2 5/5