KTN2222U_12

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. ・Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. ・Complementary to the KTN2907U/2907AU. KTN2222U/AU EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25℃) RATING CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25℃) Junction Temperature Storage Temperature Range SYMBOL KTN2222U KTN2222AU VCBO VCEO VEBO IC PC Tj Tstg 60 30 5 600 100 150 -55～150 75 40 6 V V V mA mW ℃ ℃ UNIT MARK SPEC TYPE KTN2222U KTN2222AU MARK ZB ZG 2008. 8. 29 Revision No : 3 1/5 KTN2222U/AU ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Collector Cut-off Current KTN2222AU Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * KTN2222AU KTN2222U KTN2222AU KTN2222U KTN2222AU KTN2222U KTN2222AU V(BR)CEO IE=10mA, IB=0 V(BR)CBO IC=10μ IE=0 A, KTN2222AU KTN2222U SYMBOL ICEX ICBO IEBO TEST CONDITION VCE=60V, VEB(OFF)=3V VCB=50V, IE=0 VCB=60V, IE=0 VEB=3V, IC=0 MIN. 60 75 30 40 V(BR)EBO hFE(1) KTN2222U KTN2222AU DC Current Gain * KTN2222U KTN2222AU KTN2222U Collector-Emitter Saturation Voltage * KTN2222AU KTN2222U KTN2222AU KTN2222U Base-Emitter Saturation Voltage * KTN2222AU KTN2222U KTN2222AU KTN2222U Transition Frequency KTN2222AU Collector Output Capacitance KTN2222U Input Capacitance KTN2222AU * Pulse Test : Pulse Width≦300μ Duty Cycle≦2%. S, Cib VEB=0.5V, IC=0, f=1.0MHz hFE(2) hFE(3) hFE(4) hFE(5) IE=10μ IC=0 A, IC=0.1mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IC=150mA, VCE=10V IC=500mA, VCE=10V 5 6 35 50 75 100 30 40 0.6 250 300 TYP. MAX. 10 0.01 0.01 10 V 300 0.4 0.3 V VCE(sat)2 IC=500mA, IB=50mA 1.6 1 1.3 1.2 V VBE(sat)2 IC=500mA, IB=50mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1.0MHz 2.6 2.0 MHz 8 30 pF 25 pF V V μ A nA UNIT nA VCE(sat)1 IC=150mA, IB=15mA VBE(sat)1 IC=150mA, IB=15mA fT Cob 2008. 8. 29 Revision No : 3 2/5 KTN2222U/AU ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Input Impedance KTN2222AU SYMBOL hie TEST CONDITION IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IE=20mA, VCB=20V, f=31.8MHz IC=100μ VCE=10V, A, Rg=1kΩ, f=1kHz VCC=30V, VBE(OFF)=0.5V IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=-IB2=15mA MIN. 2 0.25 50 75 5 25 TYP. MAX. 8 1.25 8 x10-4 4 300 375 μ Ω 35 200 150 4 10 25 225 60 nS kΩ UNIT Voltage Feedback Ratio KTN2222AU hre Small-Singal Current Gain KTN2222AU hfe Collector Output Admittance Collector-Base Time Constant Noise Figure KTN2222AU KTN2222AU KTN2222AU Delay Time Rise Time hoe Cc・rbb' NF td tr tstg tf pS dB Switching Time Storage Time Fall Time 2008. 8. 29 Revision No : 3 3/5 KTN2222U/AU 2008. 8. 29 Revision No : 3 4/5 KTN2222U/AU 2008. 8. 29 Revision No : 3 5/5