KTN2222_12

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B KTN2222/A EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. ・Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. ・Complementary to the KTN2907/2907A. ・KTN2222/2222A Electrically Similar to 2N2222/2222A. H A ・Low Leakage Current N K D G E F F L M 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J MAXIMUM RATING (Ta=25℃) RATING CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25℃) Junction Temperature Storage Temperature Range SYMBOL KTN2222 VCBO VCEO VEBO IC PC Tj Tstg 60 30 5 600 625 150 -55～150 KTN2222A 75 40 6 V V V mA mW ℃ ℃ UNIT 1. EMITTER 2. BASE 3. COLLECTOR TO-92 2003. 6. 16 Revision No : 2 1/5 KTN2222/A ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Collector Cut-off Current KTN2222A Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * KTN2222A KTN2222 KTN2222A KTN2222 KTN2222A KTN2222 KTN2222A V(BR)CBO IC=10μ IE=0 A, KTN2222A KTN2222 SYMBOL ICEX ICBO IEBO TEST CONDITION VCE=60V, VEB(OFF)=3V VCB=50V, IE=0 VCB=60V, IE=0 VEB=3V, IC=0 MIN. 60 75 V(BR)CEO IE=10mA, IB=0 30 40 5 6 35 50 75 100 30 40 0.6 250 300 Cib VEB=0.5V, IC=0, f=1.0MHz TYP. MAX. 10 0.01 0.01 10 V V V 300 0.4 0.3 V KTN2222 KTN2222A KTN2222 Base-Emitter Saturation Voltage * KTN2222A KTN2222 KTN2222A KTN2222 Transition Frequency KTN2222A Collector Output Capacitance KTN2222 Input Capacitance KTN2222A * Pulse Test : Pulse Width≦300μ Duty Cycle≦2%. S, VCE(sat)2 IC=500mA, IB=50mA 1.6 1 1.3 1.2 V VBE(sat)2 IC=500mA, IB=50mA 2.6 2.0 MHz 8 30 pF 25 pF μ A nA UNIT nA V(BR)EBO hFE(1) IE=10μ IC=0 A, IC=0.1mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IC=150mA, VCE=10V IC=500mA, VCE=10V KTN2222 KTN2222A DC Current Gain * KTN2222 KTN2222A KTN2222 Collector-Emitter Saturation Voltage * KTN2222A hFE(2) hFE(3) hFE(4) hFE(5) VCE(sat)1 IC=150mA, IB=15mA VBE(sat)1 IC=150mA, IB=15mA fT Cob IC=20mA, VCE=20V, f=100MHz VCB=10V, IE=0, f=1.0MHz 2003. 6. 16 Revision No : 2 2/5 KTN2222/A ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Input Impedance KTN2222A SYMBOL hie TEST CONDITION IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IE=20mA, VCB=20V, f=31.8MHz IC=100μ VCE=10V, A, Rg=1kΩ, f=1kHz VCC=30V, VBE(OFF)=0.5V IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=-IB2=15mA MIN. 2 0.25 50 75 5 25 TYP. MAX. 8 1.25 8 x10-4 4 300 375 μ Ω 35 200 150 4 10 25 225 60 nS kΩ UNIT Voltage Feedback Ratio KTN2222A hre Small-Singal Current Gain KTN2222A hfe Collector Output Admittance Collector-Base Time Constant Noise Figure KTN2222A KTN2222A KTN2222A Delay Time Rise Time hoe Cc・rbb' NF td tr tstg tf pS dB Switching Time Storage Time Fall Time 2003. 6. 16 Revision No : 2 3/5 KTN2222/A IC - VCE COLLECTOR CURRENT IC (mA) 1000 800 600 400 200 COMMON EMITTER Ta=25 C 20mA 18mA 16mA 14mA 12mA 10mA 8mA 6mA 4mA I B =2mA hFE - IC 1K VCE =10V DC CURRENT GAIN hFE 500 300 Ta=75 C Ta=25 C Ta=-25 C VCE =1V VCE =2V 100 50 30 0 0.4 0.8 1.2 1.6 1.8 10 0.5 1 3 10 30 100 300 1K COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) VCE(sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 0.6 COMMON EMITTER I C /I B =10 Ta=25 C VBE(sat) - IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.5 1 3 10 30 100 300 1k Ta=-25 C Ta=25 C Ta=75 C COMMON EMITTER I C /I B =10 VBE(sat) 0.4 0.2 VCE(sat) 0 0.5 1 3 10 30 100 300 1k COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) IC - VBE 500 300 100 30 10 3 1 0.3 0.1 0.05 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Ta=75 C fT - IC TRANSITION FREQUENCY fT (MHz) 1000 Ta=25 C VCE =10V COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE =10V 300 100 Ta= 25 C Ta=-25 C 30 10 1 3 10 30 100 300 1k 3k COLLECTOR CURRENT IC (mA) BASE-EMITTER VOLTAGE VBE (V) 2003. 6. 16 Revision No : 2 4/5 KTN2222/A COLLECTOR OUTPUT CAPACITANCE Cob (pF) COLLECTOR INPUT CAPACITANCE Cib (pF) Cob - VCB Cib - VEB COLLECTOR POWER DISSIPATION PC (mW) 100 COMMON EMITTER f=1MHz, Ta=25 C Pc - Ta 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 30 Cib 10 3.0 Cob 1.0 0.1 1.0 10 100 300 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) AMBIENT TEMPERATURE Ta ( C) 2003. 6. 16 Revision No : 2 5/5