KTN2907AE

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. H 2 KTN2907AE EPITAXIAL PLANAR PNP TRANSISTOR E B D 3 Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. Complementary to the KTN2222AE. 1 DIM A B C D E G H J MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10 0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05 A G J C 1. EMITTER MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING -60 -60 -5 -600 100 150 -55 150 UNIT V V V mA mW 2. BASE 3. COLLECTOR ESM Collector Power Dissipation (Ta=25 ) Junction Temperature Storage Temperature Range Marking ZH 2004. 1. 29 Revision No : 0 1/4 KTN2907AE ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * SYMBOL ICEX ICBO V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) hFE(2) DC Current Gain * hFE(3) hFE(4) hFE(5) Collector-Emitter Saturation Voltage * VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib Delay Time Switching Time Rise Time Storage Time Fall Time * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. td tr tstg tf TEST CONDITION VCE=-30V, VEB=-0.5V VCB=-50V, IE=0 IC=-10 A, IE=0 IC=-10mA, IB=0 IE=-10 A, IC=0 IC=-0.1mA, VCE=-10V IC=-1.0mA, VCE=-10V IC=-10mA, VCE=-10V IC=-150mA, VCE=-10V IC=-500mA, VCE=-10V IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA VCE=-20V, IC=-50mA, f=100MHz VCB=-10V, IE=0, f=1MHz VBE=-2V, IC=0, f=1.0MHz VCC=-30V, IC=-150mA IB1=-15mA VCC=-6V, IC=-150mA IB1=-IB2=-15mA MIN. -60 -60 -5 75 100 100 100 50 200 TYP. MAX. -50 -10 300 -0.4 -1.6 -1.3 -2.6 8 30 10 40 80 30 nS V UNIT nA nA V V V Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance * V MHz pF pF 2004. 1. 29 Revision No : 0 2/4 KTN2907AE I C - VCE COLLECTOR CURRENT I C (mA) -1000 -800 -600 -400 -200 COMMON EMITTER Ta=25 C I B =-40mA I B =-30mA I B =-20mA I B =-10mA I B =-5mA h FE - I C 1K DC CURRENT GAIN h FE 500 300 Ta=75 C Ta=25 C Ta=-25 C VCE =-10V 100 50 30 0 -0.4 -0.8 -1.2 -1.6 -1.8 10 -0.5 -1 -3 -10 -30 -100 -300 -1K COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.5 -1 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER I C /I B =10 V BE(sat) - I C -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.5 -1 -3 -10 -30 -100 -300 -1K Ta=-25 C Ta=25 C Ta=75 C COMMON EMITTER I C /IB =10 VBE(sat) VCE(sat) -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - V BE -500 -300 COLLECTOR CURRENT I C (mA) -100 -30 C f T - IC TRANSITION FREQUENCY f T (MHz) 1000 Ta=25 C VCE =10V COMMON EMITTER VCE =-10V -10 -3 -1 -0.3 -0.1 -0.05 -0.2 -0.3 -0.4 Ta=75 C Ta= 25 100 Ta=-25 C 10 1 10 100 1K 3K COLLECTOR CURRENT I C (mA) -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 BASE-EMITTER VOLTAGE VBE (V) 2004. 1. 29 Revision No : 0 3/4 KTN2907AE COLLECTOR OUTPUT CAPACITANCE Cob (pF) COLLECTOR INPUT CAPACITANCE Cib (pF) Cob - VCB Cib - VEB COMMON EMITTER f=1MHz, Ta=25 C P C - Ta COLLECTOR POWER DISSIPATION P C (mW) 200 100 30 Cib 150 10 100 3.0 Cob 50 1.0 -0.1 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) -1.0 -10 -100 -300 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) 2004. 1. 29 Revision No : 0 4/4