KTN2907S_02

SEMICONDUCT OR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. A KTN2907S/AS EPITAXIAL PLANAR PNP TRANSISTOR L E B L : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. G ・Low Saturation Voltage ・Complementary to the KTN2222S/2222AS. 2 3 1 P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N H MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25℃) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg -40 -5 -600 350 150 -55～150 RATING KTN2907S KTN2907AS -60 -60 UNIT V V V mA mW ℃ ℃ M 1. EMITTER 2. BASE 3. COLLECTOR K SOT-23 * Package Mounted On 99.5% Alumina 10x8x0.6mm. Marking Type Name Lot No. Lot No. ZD Type Name ZH MARK SPEC TYPE KTN2907S KTN2907AS MARK ZD ZH 2002. 4. 9 Revision No : 4 J D 1/4 KTN2907S/AS ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage KTN2907S KTN2907AS KTN2907S KTN2907AS DC Current Gain * KTN2907S KTN2907AS KTN2907S KTN2907AS KTN2907S KTN2907AS Collector-Emitter Saturation Voltage * * KTN2907S KTN2907AS KTN2907S KTN2907AS SYMBOL ICEX ICBO V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) TEST CONDITION VCE=-30V, VEB=-0.5V VCB=-50V, IE=0 IC=-10μ IE=0 A, IC=-10mA, IB=0 IE=-10μ IC=0 A, IC=-0.1mA, VCE=-10V MIN. -60 -40 -60 -5 35 75 50 100 75 100 100 30 50 200 TYP. MAX. -50 -20 -10 300 -0.4 -1.6 -1.3 -2.6 8 30 45 10 40 100 80 30 nS V UNIT nA nA V V V hFE(2) IC=-1.0mA, VCE=-10V hFE(3) IC=-10mA, VCE=-10V hFE(4) * IC=-150mA, VCE=-10V hFE(5) * VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib IC=-500mA, VCE=-10V IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA VCE=-20V, IC=-50mA, f=100MHz VCB=-10V, IE=0, f=1MHz VBE=-2V, IC=0, f=1.0MHz VCC=-30V, IC=-150mA IB1=-15mA Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance Turn-On Time Delay Time Switching Time Rise Time Turn-Off Time Storage Time Fall Time * V MHz pF pF ton td tr toff tstg tf VCC=-6V, IC=-150mA IB1=-IB2=-15mA * Pulse Test : Pulse Width≦300μ Duty Cycle≦2%. S, 2002. 4. 9 Revision No : 4 2/4 KTN2907S/AS I C - VCE COLLECTOR CURRENT I C (mA) -1000 -800 -600 -400 -200 COMMON EMITTER Ta=25 C I B =-40mA I B =-30mA I B =-20mA I B =-10mA I B =-5mA h FE - I C 1K DC CURRENT GAIN h FE 500 300 Ta=75 C Ta=25 C Ta=-25 C VCE =-10V 100 50 30 0 -0.4 -0.8 -1.2 -1.6 -1.8 10 -0.5 -1 -3 -10 -30 -100 -300 -1K COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.5 -1 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER I C /I B =10 V BE(sat) - I C -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.5 -1 -3 -10 -30 -100 -300 -1K Ta=-25 C Ta=25 C Ta=75 C COMMON EMITTER I C /IB =10 VBE(sat) VCE(sat) -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - V BE -500 -300 COLLECTOR CURRENT I C (mA) -100 -30 -10 -3 -1 -0.3 -0.1 -0.05 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 Ta=75 C Ta= 25 C f T - IC TRANSITION FREQUENCY f T (MHz) 1000 Ta=25 C VCE =10V COMMON EMITTER VCE =-10V 100 Ta=-25 C 10 1 10 100 1K 3K COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V) 2002. 4. 9 Revision No : 4 3/4 KTN2907S/AS COLLECTOR OUTPUT CAPACITANCE Cob (pF) COLLECTOR INPUT CAPACITANCE Cib (pF) Cob - VCB Cib - V EB COLLECTOR POWER DISSIPATION PC (mW) 100 COMMON EMITTER f=1MHz, Ta=25 C Pc - Ta 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) (1) MOUNTED ON 99.5% ALUMINA 10x8x0.6mm (2) Ta=25 C 30 Cib (1) 10 (2) 3.0 Cob 1.0 -0.1 -1.0 -10 -100 -300 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) 2002. 4. 9 Revision No : 4 4/4