KTX201

SEMICONDUCT OR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ・Including two devices in USV. (Ultra Super mini type with 5 leads) A1 KTX201U EPITAXIAL PLANAR PNP/NPN TRANSISTOR B B1 1 5 ・Simplify circuit design. ・Reduce a quantity of parts and manufacturing process A 2 3 4 D DIM A A1 B B1 C D G H MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25 + 0.1 0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05 C C H Marking EQUIVALENT CIRCUIT(TOP VIEW) 5 4 T G T Type Name 5 4 h FE Rank 1. Q 1 BASE 2. Q 1, Q 2 EMITTER 3. Q 2 BASE 4. Q 2 COLLECTOR 5. Q 1 COLLECTOR Q1 Q2 C 1 2 3 1 2 3 USV Q1 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current SYMBOL VCBO VCEO VEBO IC IB RATING -50 -50 -5 -150 -30 UNIT V V V ㎃ ㎃ Q2 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current SYMBOL VCBO VCEO VEBO IC IB RATING 60 50 5 150 30 UNIT V V V ㎃ ㎃ Q1 Q2 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL PC * Tj Tstg RATING 200 150 -55～150 UNIT ㎽ ℃ ℃ 2002. 6. 14 Revision No : 2 1/5 KTX201U Q1 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note)hFE Classification : Y(4)120~240, SYMBOL ICBO IEBO hFE (Note) VCE(sat) fT Cob NF GR(6)200~400 TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2㎃ IC=-100㎃, IB=-10㎃ VCE=-10V, IC=-1㎃ VCB=-10V, IE=0, f=1㎒ VCE=-6V, IC=-0.1㎃, f=1㎑, Rg=10㏀ MIN. 120 80 TYP. -0.1 4.0 1.0 MAX. -0.1 -0.1 400 -0.3 7.0 10 V ㎒ ㎊ ㏈ UNIT. ㎂ ㎂ Q2 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note)hFE Classification : Y(4)120~240, SYMBOL ICBO IEBO hFE (Note) VCE(sat) fT Cob NF GR(6)200~400 TEST CONDITION VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2㎃ IC=100㎃, IB=10㎃ VCE=10V, IC=1㎃ VCB=10V, IE=0, f=1㎒ VCE=6V, IC=0.1㎃, f=1㎑, Rg=10㏀ MIN. 120 80 TYP. 0.1 2.0 1.0 MAX. 0.1 0.1 400 0.25 3.5 10 V ㎒ ㎊ ㏈ UNIT. ㎂ ㎂ 2002. 6. 14 Revision No : 2 2/5 KTX201U Q 1 (PNP TRANSISTOR) I C - V CE COLLECTOR CURRENT I C (mA) -240 I B =-2.0mA COMMON EMITTER Ta=25 C I B =-1.5mA I B =-1.0mA h FE - I C 3k DC CURRENT GAIN h FE COMMON EMITTER -200 -160 -120 -80 -40 0 0 -1 -2 1k 500 300 Ta=100 C Ta=25 C VCE =-6V I B =-0.5mA I B =-0.2mA I B =0mA 100 50 30 -0.1 Ta=-25 C VCE =-1V -3 -4 -5 -6 -7 -0.3 -1 -3 -10 -30 C -100 (mA) -300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 -0.5 -0.3 COMMON EMITTER IC /I B =10 VBE(sat) - I C -10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) -5 -3 COMMON EMITTER I C /I B =10 Ta=25 C -0.1 -0.05 -0.03 0 =1 Ta 0 C -1 -0.5 -0.3 Ta=25 C Ta=-25 C -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 -300 -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) fT - IC TRANSITION FREQUENCY f T (MHz) 3k 1k 500 300 100 50 30 10 -0.1 COMMON EMITTER VCE =-10V Ta=25 C IB - VBE -1k BASE CURRENT IB (µA) -300 -100 -30 -10 -3 -1 -0.3 Ta=2 5C Ta=-2 5C Ta=1 00 C COMMON EMITTER VCE =-6V -0.3 -1 -3 -10 -30 -100 -300 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V) 2002. 6. 14 Revision No : 2 3/5 KTX201U Q 2 (NPN TRANSISTOR) I C - V CE 240 COLLECTOR CURRENT I C (mA) 6.0 5.0 3.0 COMMON EMITTER 2.0 h FE - I C 1k DC CURRENT GAIN hFE 500 300 Ta=100 C Ta=25 C Ta=-25 C VCE =6V COMMON EMITTER 200 160 120 80 40 0 0 1 2 Ta=25 C 1.0 0.5 I B =-0.2mA 0 100 50 30 V CE =1V 3 4 5 6 7 10 0.1 0.3 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 COMMON EMITTER IC /IB =10 V BE(sat) - I C 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 5 3 COMMON EMITTER IC /IB =10 Ta=25 C 0.1 0.05 0.03 00 =1 Ta C 1 0.5 0.3 Ta=25 C Ta=-25 C 0.01 0.1 0.3 1 3 10 30 100 300 0.1 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) fT - I C TRANSITION FREQUENCY f T (MHz) 3k 1k 500 300 100 50 30 10 COMMON EMITTER VCE =10V Ta=25 C I B - VBE 3k BASE CURRENT IB (µA) 1k 300 100 Ta=1 0 COMMON EMITTER VCE =6V 30 10 3 1 0.1 0.3 1 3 10 30 100 300 0.3 0 0.2 0.4 0C Ta=2 5C Ta=25 C 0.6 0.8 1.0 1.2 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V) 2002. 6. 14 Revision No : 2 4/5 KTX201U COLLECTOR POWER DISSIPATION PC (mW) P C - Ta 250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2002. 6. 14 Revision No : 2 5/5