KU056N03Q

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack. D P KU056N03Q N-Ch Trench MOSFET H T G L FEATURES ・VDSS=30V, ID=17A. ・Drain to Source On Resistance. RDS(ON)=5.6mΩ(Max.) @ VGS=10V RDS(ON)=9.7mΩ(Max.) @ VGS=4.5V 8 5 B1 B2 1 4 A MOSFET Maximum Ratings (Ta=25℃ Unless otherwise noted) CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Drain Power Dissipation DC@Ta=25℃ (Note 1) Pulsed @Ta=25℃ (Note 1) SYMBOL RATING VDSS VGSS ID IDP PD Tj Tstg (Note 1) RthJA 30 ±20 17 68 2.5 150 -55~150 50 UNIT V V A A W ℃ ℃ ℃/W DIM A B1 B2 D G H L P T MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05 FLP-8 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note1) Surface Mounted on 1″ 1″ × FR4 Board, t≤10sec. KU056N 03Q PIN CONNECTION (TOP VIEW) S S S G 1 8 D D D D 1 2 3 8 7 6 5 2 7 3 6 4 4 5 2010. 6. 17 Revision No : 0 1/4 KU056N03Q ELECTRICAL CHARACTERISTICS (Ta=25℃) UNLESS OTHERWISE NOTED CHARACTERISTIC Static Drain to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Current Gate to Source Threshold Voltage Drain to Source On Resistance Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source to Drain Diode Ratings Source to Drain Forward Voltage Reverse Recovery Time Reverse Recovery Charge VSD trr Qrr VGS=0V, IS=17A IS=17A, dI/dt=100A/μ s IS=17A, dI/dt=100A/μ s (Note2) 0.8 26.1 17.3 1.2 V ns nC VGS=10V VGS=4.5V Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDS=15V, VGS=10V ID=17A, RG=1.6Ω (Note2) VDS=15V, VGS=10V, ID=17A (Note2) f=1MHz VDS=15V, VGS=0V, f=1MHz (Note2) 2772 550 398 3.5 64.5 32.2 8.0 14.3 11.0 15.8 58.2 20.0 nC ns Ω pF BVDSS IDSS IGSS Vth RDS(ON) gfs VGS=0V, ID=250μ A VGS=0V, VDS=30V VGS=±20V, VDS=0V VDS=VGS, ID=250μ A VGS=10V, ID=17A VGS=4.5V, ID=14A VDS=5V, ID=17A (Note2) (Note2) (Note2) 30 1.0 4.7 8.1 68 1 ±100 3.0 5.6 9.7 mΩ S V μ A nA V SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Note2) Pulse Test : Pulse Width≤300㎲, Duty Cycle≤2% 2010. 6. 17 Revision No : 0 2/4 KU056N03Q Drain to Source On Resistance RDS(ON) (mΩ) Fig1. ID - VDS 70 VGS=10V, 5V, 4.5V, 3.5V, 4.0V 3.0V Fig2. RDS(on) - ID 10 8 6 VGS=4.5V Drain Current ID (A) 56 42 28 14 0 0 4 VGS=10V 2 0 0.5 1.0 1.5 2.0 2.5 3.0 0 14 28 42 56 70 Drain to Source Voltage VDS (V) Drain Current ID (A) Fig3. ID - VGS VDS = 5V Fig4. RDS(ON) - Tj Normalized On Resistance RDS(ON) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 VGS=10V, ID=17A VGS=4.5V, ID=14A 70 Drain Current ID (A) 56 42 28 14 0 Tj=150 C Tj=-55 C Tj=25 C 0 1 2 3 4 Gate to Source Voltage VGS (V) Junction Temperature Tj ( C ) Normalized Gate to Source Threshold Voltage Fig5. Vth - Tj 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 Fig6. IS - VSD 102 Reverse Drain Current IS (A) VDS = VGS, ID = 250µA 101 Tj=150 C Tj=25 C 100 Tj=-55 C 10-1 0.2 0.4 0.6 0.8 1.0 1.2 Junction Temperature Tj ( C ) Source to Drain Voltage VSD (V) 2010. 6. 17 Revision No : 0 3/4 KU056N03Q Drain to Source On Resistance RDS(ON) (mΩ) Fig7. RDS(ON) - VGS 20 ID=17A Fig8. C - VDS 104 f=1MHz Ciss Capacitance C (pF) 16 12 8 Tj=150 C 103 Coss Crss 102 4 Tj=25 C 0 2 4 6 8 10 101 0 5 10 15 20 25 30 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Fig9. Qg - VGS 10 Fig10. Safe Operation Area 102 Gate to Source Voltage VGS (V) VDS = 15V, ID = 17A Drain Current ID (A) 8 6 4 2 0 0 15 30 45 60 75 100us 101 R DS N) (O L IM IT 1ms 10ms 100ms 100 10-1 VGS= 10V SINGLE PULSE TA= 25 C DC 10-2 10-2 10-1 100 101 102 Gate to Charge Qg (nC) Drain to Source Voltage VDS (V) Fig11. Transient Thermal Response Curve Normalized Effective Transient Thermal Resistance 101 100 0.5 0.2 0.1 10-1 0.05 0.02 0.01 10-2 Single Pulse PDM t1 t2 RthJA=58.0 C/W 10-3 10-4 10-3 10-2 10-1 100 101 102 103 Square Wave Pulse Duration tW(sec) 2010. 6. 17 Revision No : 0 4/4