KU086N10P

SEMICONDUCTOR TECHNICAL DATA General Description T his Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES ・VDSS= 100V, ID= 95A ・Drain-Source ON Resistance : RDS(ON)=8.6mΩ(Max.) @VGS = 10V D N N A KU086N10P/F N-ch Trench MOS FET KU086N10P O C F E G B Q I K M L J H P DIM MILLIMETERS _ 9.9 + 0.2 A B C D E F G H I J K L M N 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 4.5 + 0.2 _ 2.4 + 0.2 _ 9.2 + 0.2 MAXIMUM RATING (Tc=25℃) RATING CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25℃ Drain Current @TC=100℃ Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25℃ Derate above 25℃ SYMBOL KU086N10P KU086N10F VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 167 1.33 150 -55 ~ 150 95 60 400* 570 7.1 4.5 50 0.4 mJ mJ B UNIT 100 ±20 50 32.5 A V V O 1 2 3 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB KU086N10F A F C O E DIM MILLIMETERS V/ns W K W/℃ ℃ ℃ Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient L M J R D RthJC RthJA 0.75 62.5 2.5 ℃/W ℃/W 1 N N H 2 3 1. GATE 2. DRAIN 3. SOURCE * : Drain current limited by maximum junction temperature. Q A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 12.57 + 0.2 _ 0.5 + 0.1 _ 13.0 + 0.5 _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 PIN CONNECTION D TO-220IS (1) G S 2011. 1. 20 Revision No : 0 G 1/7 KU086N10P/F ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS ΔBVDSS/ΔTj IDSS Vth IGSS RDS(ON) ID=250μ VGS=0V A, ID=5mA, Referenced to 25℃ VDS=100V, VGS=0V, VDS=VGS, ID=250μ A VGS=±20V, VDS=0V VGS=10V, ID=47.5A 100 2.0 0.09 7.3 10 4.0 ±100 8.6 V V/℃ μ A V nA mΩ Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS