KU2307K

SEMICONDUCTOR TECHNICAL DATA General Description 5 KU2307K N-Ch Trench MOSFET L1 4 This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. D e 8 1 b E FEATURES A VDSS=30V, ID=79A. Low Drain to Source On-state Resistance. : RDS(ON)=6.0mΩ(Max.) @ VGS=10V : RDS(ON)=10.3mΩ(Max.) @ VGS=4.5V D1 H E2 E1 K C DIM A b C D D1 E E1 E2 e H MILLIMETERS L 1 8 5 4 K L L1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Unless otherwise Noted) SYMBOL RATING VDSS VGSS 30 20 79 A 316 203 62.5 W 2.5 150 -55 150 2.0 50 /W /W mJ UNIT V V 1,2,3 : Source 4 : Gate 5,6,7,8 : Drain _ 1.00 + 0.10 0.41+0.10/-0.08 _ 0.25 + 0.05 _ 4.90 + 0.10 3.81+0.15/-0.20 _ 6.00 + 0.10 _ 5.75 + 0.05 _ 3.58 + 0.20 1.27 BSC _ 0.51 + 0.10 1.10 MIN _ 0.61 + 0.10 _ 0.13 + 0.07 0 ~ 12 PSOP-8 MARKING DC@TC=25 Pulsed (Note1) (Note2) (Note3) (Note1) (Note2) ID IDP EAS PD Tj Tstg Single Pulsed Avalanche Energy Drain Power Dissipation @TC=25 @Ta=25 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient KU2307 K Type Name Lot No (Note1) (Note2) RthJC RthJA Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1″ 1″ Pad of 2 oz copper. Note 3) L=32.5 H, IAS=79A, VDD=15V, VGS=10V, Starting Tj=25 PIN CONNECTION (TOP VIEW) D 8 D 7 D 6 D 5 DD D D 1 2 3 4 S S S G S S S G 2009. 7. 30 Revision No : 0 1/4 KU2307K ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Current Gate to Source Threshold Voltage Drain to Source On Resistance Forward Transconductance Dynamic Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source to Drain Diode Ratings Source to Drain Forward Voltage Reverse Recovery time Reverse Recovered charge Note 4) Pulse Test : Pulse width