KU310N10D

SEMICONDUCTOR TECHNICAL DATA General Description T his Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES ・VDSS= 100V, ID= 27A ・Drain-Source ON Resistance : RDS(ON)=31mΩ(Max.) @VGS = 10V H G F F KU310N10D N-ch Trench MOS FET A C K D L B J E N M DIM MILLIMETERS _ A 6.60 + 0.20 _ 6.10 + 0.20 B _ 5.34 + 0.30 C _ D 0.70 + 0.20 _ E 2.70 + 0.15 _ 2.30 + 0.10 F 0.96 MAX G 0.90 MAX H _ 1.80 + 0.20 J _ 2.30 + 0.10 K _ 0.50 + 0.10 L _ M 0.50 + 0.10 0.70 MIN N MAXIMUM RATING (Tc=25℃) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25℃ Drain Current @TC=100℃ Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25℃ Derate above 25℃ SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg RATING 100 ±20 27 17 110* 60 2.3 4.5 52 0.42 150 -55 ~ 150 mJ mJ V/ns W W/℃ ℃ ℃ A UNIT V V 1 2 3 1. GATE 2. DRAIN 3. SOURCE DPAK (1) Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA 2.4 110 ℃/W ℃/W * : Drain current limited by maximum junction temperature. PIN CONNECTION D G S 2011. 1. 21 Revision No : 0 1/7 KU310N10D ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS ΔBVDSS/ΔTj IDSS Vth IGSS RDS(ON) ID=250μ VGS=0V A, ID=5mA, Referenced to 25℃ VDS=100V, VGS=0V, VDS=VGS, ID=250μ A VGS=±20V, VDS=0V VGS=10V, ID=13.5A 100 2.0 0.10 25 10 4.0 ±100 31 V V/℃ μ A V nA mΩ Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS