MBR10200CT

SEMICONDUCTOR TECHNICAL DATA SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A MBR10200CT SCHOTTKY BARRIER TYPE DIODE O C F FEATURES Average Output Rectified Current : IO=10A. Repetitive Peak Reverse Voltage : VRRM=200V. Fast Reverse Recovery Time : trr=35ns. I K M L J D N N E G B Q P H MAXIMUM RATING (Ta=25 CHARACTERISTIC Repetitive Peak Reverse Voltage Average Output Rectified Current (Tc=118 ) (Note) Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Junction Temperature Storage Temperature Range ) SYMBOL VRRM IO RATING 200 10 UNIT V A 1. ANODE 2. CATHODE 3. ANODE DIM MILLIMETERS _ 9.9 + 0.2 A 15.95 MAX B 1.3+0.1/-0.05 C _ D 0.8 + 0.1 _ E 3.6 + 0.2 _ F 2.8 + 0.1 3.7 G H 0.5+0.1/-0.05 1.5 I _ J 13.08 + 0.3 K 1.46 _ 1.4 + 0.1 L _ 1.27+ 0.1 M _ 2.54 + 0.2 N _ 4.5 + 0.2 O _ 2.4 + 0.2 P _ 9.2 + 0.2 Q IFSM Tj Tstg 100 -40 -55 150 150 A TO-220AB Note : average forward current of centertap full wave connection. 2 1 3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Peak Forward Voltage Repetitive Peak Reverse Current Reverse Recovery Time Thermal Resistance Note : A value of one cell (Note) (Note) (Note) (Note) SYMBOL VFM IRRM trr Rth(j-c) IFM=5A VRRM=Rated IF=1.0A, di/dt=-30A/ Juction to Case TEST CONDITION MIN. TYP. MAX. 0.95 150 35 2.2 ns UNIT V /W 2008. 1. 3 Revision No : 0 1/2 MBR10200CT IF - V F 10 10 IR - V R REVERSE CURRENT IR (µA) FORWARD CURRENT IF (A) Tj =25 C Tj =25 C 1 1 0.1 0.2 0.4 0.6 0.8 1 0.1 0 50 100 150 200 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) AVERAGE FORWARD CURRENT IF(AV) (A) IF - TC AVERAGE FORWARD CURRENT I F(AV) (A) 12 10 8 DC IF - TA 12 10 8 6 4 2 0 0 40 80 120 160 DC DC RATED VOLTAGE APPLIED R ΘJA=16 C/W R ΘJA=62.5 C/W (NO HEAT SINK) 6 4 2 0 25 50 75 100 125 150 175 RATED VOLTAGE APPLIED R ΘJC = 2.2 C/W CASE TEMPERATURE Tc ( C) AMBIENT TEMPERATURE TA ( C) AVERAGE FORWARD POWER DISSIPATION PF(AV) (W) PF(AV) - IF(AV) 10 8 6 DC 4 2 0 0 2 4 6 8 10 12 AVERAGE FORWARD CURRENT IF(AV) (A) 2008. 1. 3 Revision No : 0 2/2