MBRD6U60CT-RTF/H

SEMICONDUCTOR MBRD6U60CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES A C ・Average Output Rectified Current K L D : IO=6A. ・Repetitive Peak Reverse Voltage B : VRRM=60V. H J E N G F F M MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT VRRM 60 V DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N 0.1 MAX O 1. ANODE 1 2 3 2. CATHODE Repetitive Peak Reverse Voltage 3. ANODE O Average Output Rectified Current (Tc=114℃) (Note) Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Junction Temperature Storage Temperature Range IO 6 A IFSM 45 A Tj -40～150 ℃ Tstg -55～150 ℃ DPAK (1) 2 Note : average forward current of centertap full wave connection. 1 3 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Peak Forward Voltage (Note) Repetitive Peak Reverse Current (Note) Thermal Resistance (Note) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VFM IFM=3A - - 0.65 V IRRM VRRM=60V - - 50 µA Rth(j-c) Juction to Case - - 6.0 ℃/W Note : A value of one cell 2010. 10. 8 Revision No : 0 1/2 MBRD6U60CT 2010. 10. 8 Revision No : 0 2/2