MMBTA517_99

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. MMBTA517 EPITAXIAL PLANAR NPN TRANSISTOR L E B L 2 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature ) SYMBOL VCBO VCEO VEBO IC PC * Tj Tstg RATING 40 30 10 400 350 150 -55 150 0.6mm. UNIT V C 1 P P N V V DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G H M mA mW 1. EMITTER 2. BASE 3. COLLECTOR * : Package Mounted On 99.5% Alumina 10 8 K SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Collector Output Capacitance ) TEST CONDITION IC=0.1mA IC=10mA IE=-1.0mA VCB=40V VEB=10V IC=100mA, VCE=2V IC=100mA, IB=1mA IC=100mA, IB=10mA IC=100mA, f=100MHz, VCE=2V VCB=10V, f=1MHz MIN. 40 30 10 30K TYP. 1.5 220 5 MAX. 1 1 1 2 V V MHz pF UNIT V V V A A SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob 1999. 11. 30 Revision No : 3 J D 1/2 MMBTA517 1999. 11. 30 Revision No : 3 2/2