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MMBTA63_08

MMBTA63_08

  • 厂商:

    KEC

  • 封装:

  • 描述:

    MMBTA63_08 - EPITAXIAL PLANAR PNP TRANSISTOR - KEC(Korea Electronics)

  • 数据手册
  • 价格&库存
MMBTA63_08 数据手册
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MMBTA63/64 EPITAXIAL PLANAR PNP TRANSISTOR L E B L A G MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCES VEBO IC ICP PC * Tj Tstg RATING -30 -30 -10 -500 -1 350 150 -55 150 UNIT V 2 3 1 MMBTA63/64 MMBTA63/64 P P C V V mA DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 N H M 1. EMITTER A mW 2. BASE 3. COLLECTOR K SOT-23 * : Package Mounted On 99.5% Alumina 10 8 0.6mm. ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current MMBTA63 MMBTA64 DC Current Gain MMBTA63 MMBTA64 Collector-Emitter Saturation Voltage Base Emitter Voltage Current Gain Bandwith Product MMBTA63/64 MMBTA63/64 MMBTA63/64 ) TEST CONDITION IC=-0.1mA, IB=0 VCB=-30V, IE=0 VEB=-10V, IC=0 IC=-10mA, VCE=-5V MIN. -30 5,000 10,000 10,000 20,000 125 TYP. MAX. -0.1 -0.1 -1.5 -2.0 V V MHz UNIT V A A SYMBOL V(BR)CES ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT IC=-100mA, VCE=-5V IC=-100mA, IB=-0.1mA IC=-100mA, VCE=-5V IC=-10mA, f=100MHz VCE=-5V *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% MARK SPEC TYPE MARK MMBTA63 AGX MMBTA64 AFX Marking Lot No. Type Name AX 2008. 8. 29 Revision No : 5 J D 1/2 MMBTA63/64 CURRENT GAIN BANDWIDTH PRODUCT f T (MHz) h FE - I C 1M DC CURRENT GAIN h FE 300k 100k 30k 10k 3k 1k -1 VCE =-5V f T - IC 1k 300 100 30 10 3 1 -1 -3 -10 -30 -100 -300 -1k VCE =-5V -3 -10 -30 -100 -300 -1k COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) VBE(sat) , VCE(sat) - I C I C =1000I B VBE(sat) I C - V BE COLLECTOR CURRENT I C (mA) -200 VCE =-5V -10 SATURATION VOLTAGE VBE(sat) , VCE(sat) (V) -3 -1 V CE(sat) -100 -30 -0.3 -0.1 -0.03 -0.01 -1 -3 -10 -30 -100 -300 -1k -10 -3 -1 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V) 2008. 8. 29 Revision No : 5 2/2
MMBTA63_08 价格&库存

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