SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE
B
MPS651
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
High Current : IC(Max.)=1A. High Transition Frequency : fT=150MHz(Typ.). Wide Area of Safe Operation. Complementary to MPS751.
K D G N E
A
High Voltage : VCEO=60V(Min.).
H
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse
)
SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING 80 60 5 1 2 625 150 -55 150 UNIT
L
F
F
1
2
3
V V V A mW
M
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00
J
1. EMITTER 2. BASE 3. COLLECTOR
TO-92
Collector Power Dissipation Junction Temperature Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitanc Note : hFE(1) Classification
)
TEST CONDITION VCB=50V, IE=0 VEB=4V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=1A IC=1mA, IB=0 IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz MIN. 100 30 60 TYP. 0.15 0.85 150 12 MAX. 100 100 320 0.5 1.2 V V V MHz pF UNIT nA nA ICBO IEBO hFE(1) hFE(2) V(BR)CEO VCE(sat) VBE(sat) fT Cob
SYMBOL
Y:100 200 , GR:160 320
1999. 11. 30
Revision No : 2
1/3
MPS651
I C - V CE
COLLECTOR CURRENT I C (mA) 1k COLLECTOR CURRENT I C (mA)
10m A 8m A 6m A
I C - V CE
1k
50m A
30m A
20m
A
10mA 6mA
800 600 400 200 0
4mA 3mA 2mA
800 600 400 200
4mA 2mA
1mA I B =0mA
I B =0mA
0
2
4
6
8
10
12
0
0
0.2
0.4
0.6
0.8
1.0
1.2
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
h FE - I C
COLLECTOR OUTPUT CAPACITANCE C ob (pF) 1k DC CURRENT GAIN h FE 500 300
VCE =2V COMMON EMITTER Ta=25 C
C ob - V CB
100 50 30
COMMON EMITTER f=1MHz Ta=25 C
100 50 30
10 5 3 1 3 5 10 30 50 100 COLLECTOR-BASE VOLTAGE VCB (V)
10 1 3 10 30 100 300 1k 3k COLLECTOR CURRENT I C (mA)
fT - IC
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) TRANSITION FREQUENCY fT (MHz) 300
COMMON EMITTER Ta=25 C VCE =10V
VCE(sat) - I C
5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 5 10 30 100 300 1k 3k COLLECTOR CURRENT I C (mA)
I C /I B
COMMON EMITTER Ta=25 C
100 50 30
=10
10 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA)
1999. 11. 30
Revision No : 2
2/3
MPS651
SAFE OPERATING AREA
COLLECTOR CURRENT IC (A)
1PULSE I CP I C MAX.
DC
1s
Pc - Ta
COLLECTOR POWER DISSIPATION PC (mW) 100 1.2k 1k 800 600 400 200 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C)
5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005
OP
ec
c se 1m
ms 10 ec
10
ER
0m
AT
c se
IO
N
0.5
1
3
5
10
30
50
COLLECTOR-EMITTER VOLTAGE VCE (V)
1999. 11. 30
Revision No : 2
3/3
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