MPS8050

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURE ・Complementary to MPS8550. B MPS8050 EPITAXIAL PLANAR NPN TRANSISTOR C A N MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW SYMBOL VCBO VCEO VEBO IC PC* Tj Tstg RATING 40 25 6 1.5 625 mW 400 150 -55～150 ℃ ℃ UNIT V V V A L K D G E H F F M 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO hFE(1) DC Current Gain hFE(2) (Note) hFE(3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(2) Classification VCE(sat) VBE(sat) VBE fT Cob TEST CONDITION VCB=35V, IE=0 VEB=6V, IC=0 IC=100μ IE=0 A, IC=2mA, IB=0 VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCE=10V, IC=50mA VCB=10V, f=1MHz, IE=0 MIN. 40 25 45 85 40 100 TYP. 135 160 110 0.28 0.98 0.66 190 9 MAX. 100 100 300 0.5 1.2 1.0 V V V MHz pF UNIT nA nA V V B:85～160 , C : 120～200 , D : 160～300 2010. 6. 10 Revision No : 3 1/2 MPS8050 I C - V CE 0.5 COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE 0.4 0.3 0.2 0.1 0 I B=3.0mA I B=2.5mA I B=2.0mA I B=1.5mA I B=1.0mA I B=0.5mA h FE - I C 1000 VCE =1V 100 0 0.4 0.8 1.2 1.6 2.0 10 0.1 1 10 100 1000 10000 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) I C - V BE COLLECTOR CURRENT I C (mA) 100 50 30 10 5 3 1 0.5 0.3 0.1 VCE =1V V BE(sat), VCE(sat) - I C 10000 SATURATION VOLTAGE V BE(sat), VCE(sat) (mV) VBE (sat) IC =10IB 1000 100 VCE (sat) 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.1 1 10 100 1000 10000 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT IC (mA) fT - IC COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) 300 VCE =10V C ob - V CB 100 50 30 f=1MHz I E =0 100 50 30 10 5 3 10 1 1 3 5 10 30 50 COLLECTOR-BASE VOLTAGE VCB (V) 1 3 5 10 30 50 100 300 COLLECTOR CURRENT I C (mA) 2010. 6. 10 Revision No : 3 2/2