MPS8050S-D-RTK/P

SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E B L D L ・Complementary to MPS8550S. H MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V IC 1.5 A PC * 350 mW Tj 150 ℃ Tstg -55～150 ℃ 3 G A 2 1 Q Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range P K J N C P DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR * PC : Package Mounted On 99.5% Alumina (10×8×0.6㎜) SOT-23 Marking h FE Rank Type Name Lot No. BH ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=35V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=6V, IC=0 - - 100 nA Collector-Base Breakdown Voltage V(BR)CBO IC=100μA, IE=0 40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=2mA, IB=0 25 - - V VCE=1V, IC=5mA 45 135 - hFE(2) (Note) VCE=1V, IC=100mA 85 160 300 hFE(3) VCE=1V, IC=800mA 40 110 - Collector-Emitter Saturation Voltage VCE(sat) IC=800mA, IB=80mA - 0.28 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=800mA, IB=80mA - 0.98 1.2 V hFE(1) DC Current Gain Base-Emitter Voltage VBE VCE=1V, IC=10mA - 0.66 1.0 V Transition Frequency fT VCE=10V, IC=50mA 100 190 - MHz - 9 - pF Collector Output Capacitance Note : hFE(2) Classification 2009. 6. 10 Cob VCB=10V, f=1MHz, IE=0 B:85～160 , C : 120～200 , D : 160～300 Revision No : 2 1/2 MPS8050S h FE - I C I C - V CE 1000 I B=3.0mA DC CURRENT GAIN h FE COLLECTOR CURRENT I C (A) 0.5 0.4 I B=2.5mA I B=2.0mA 0.3 I B=1.5mA 0.2 I B=1.0mA 0.1 0 0.4 0.8 1.2 1.6 10 0.1 2.0 1000 V BE(sat), VCE(sat) - I C 10000 VCE =1V 10 5 3 1 0.5 0.3 0.2 0.4 0.6 0.8 1.0 VBE (sat) 100 VCE (sat) 10 1 0.1 1.2 1 10 100 1000 COLLECTOR CURRENT IC (mA) f T - IC C ob - VCB COLLECTOR OUTPUT CAPACITANCE C ob (pF) BASE-EMITTER VOLTAGE V BE (V) 300 VCE =10V 100 50 30 10 3 5 10 30 50 100 COLLECTOR CURRENT I C (mA) Revision No : 2 300 10000 IC =10IB 1000 0.1 2009. 6. 10. 100 I C - VBE 50 30 1 10 COLLECTOR CURRENT I C (mA) 100 0 1 COLLECTOR-EMITTER VOLTAGE V CE (V) SATURATION VOLTAGE V BE(sat), VCE(sat) (mV) COLLECTOR CURRENT I C (mA) 100 I B=0.5mA 0 TRANSITION FREQUENCY f T (MHz) VCE =1V 10000 100 f=1MHz I E =0 50 30 10 5 3 1 1 3 5 10 30 50 COLLECTOR-BASE VOLTAGE VCB (V) 2/2