SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION. FEATURE
・Complementary to MPS8550.
B
MPS8050
EPITAXIAL PLANAR NPN TRANSISTOR
C
A
N
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW SYMBOL VCBO VCEO VEBO IC PC* Tj Tstg RATING 40 25 6 1.5 625 mW 400 150 -55~150 ℃ ℃ UNIT V V V A
L
K D
G
E
H
F
F
M
1
2
3
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00
J
1. EMITTER 2. BASE 3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO hFE(1) DC Current Gain hFE(2) (Note) hFE(3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(2) Classification VCE(sat) VBE(sat) VBE fT Cob TEST CONDITION VCB=35V, IE=0 VEB=6V, IC=0 IC=100μ IE=0 A, IC=2mA, IB=0 VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCE=10V, IC=50mA VCB=10V, f=1MHz, IE=0 MIN. 40 25 45 85 40 100 TYP. 135 160 110 0.28 0.98 0.66 190 9 MAX. 100 100 300 0.5 1.2 1.0 V V V MHz pF UNIT nA nA V V
B:85~160 , C : 120~200 , D : 160~300
2010. 6. 10
Revision No : 3
1/2
MPS8050
I C - V CE
0.5 COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE 0.4 0.3 0.2 0.1 0
I B=3.0mA I B=2.5mA I B=2.0mA I B=1.5mA I B=1.0mA I B=0.5mA
h FE - I C
1000
VCE =1V
100
0
0.4
0.8
1.2
1.6
2.0
10 0.1
1
10
100
1000
10000
COLLECTOR-EMITTER VOLTAGE V CE (V)
COLLECTOR CURRENT I C (mA)
I C - V BE
COLLECTOR CURRENT I C (mA) 100 50 30 10 5 3 1 0.5 0.3 0.1
VCE =1V
V BE(sat), VCE(sat) - I C
10000 SATURATION VOLTAGE V BE(sat), VCE(sat) (mV)
VBE (sat) IC =10IB
1000
100
VCE (sat)
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1 0.1
1
10
100
1000
10000
BASE-EMITTER VOLTAGE V BE (V)
COLLECTOR CURRENT IC (mA)
fT - IC
COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) 300
VCE =10V
C ob - V CB
100 50 30
f=1MHz I E =0
100 50 30
10 5 3
10
1 1 3 5 10 30 50 COLLECTOR-BASE VOLTAGE VCB (V)
1
3
5
10
30 50
100
300
COLLECTOR CURRENT I C (mA)
2010. 6. 10
Revision No : 3
2/2
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