MPS8550-D-AT/PC

SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A ᴌComplementary to MPS8050. N MAXIMUM RATING (Ta=25ᴱ) UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V VEBO -6 V Collector Current IC -1.5 A Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150 ᴱ H Storage Temperature Range F F L Emitter-Base Voltage J RATING 1 2 3 C SYMBOL G D DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M CHARACTERISTIC E K 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -100 nA Emitter Cut-off Current IEBO VEB=-6V, IC=0 - - -100 nA Collector-Base Breakdown Voltage V(BR)CBO IC=-100Ọ A, IE=0 -40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-2mA, IB=0 -25 - - V VCE=-1V, IC=-5mA 45 170 - hFE(2) (Note) VCE=-1V, IC=-100mA 85 160 300 hFE(3) VCE=-1V, IC=-800mA 40 80 - Collector-Emitter Saturation Voltage VCE(sat) IC=-800mA, IB=-80mA - -0.28 -0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=-800mA, IB=-80mA - -0.98 -1.2 V hFE(1) DC Current Gain Base-Emitter Voltage VBE VCE=-1V, IC=-10mA - -0.66 -1.0 V Transition Frequency fT VCE=-10V, IC=-50mA 100 200 - MHz - 15 - pF Collector Output Capacitance Note : hFE(2) Classification 1999. 10. 25 Cob VCB=-10V, f=1MHz, IE=0 B:85ᴕ160 , C : 120ᴕ200 , D : 160ᴕ300 Revision No : 1 1/2 MPS8550 I C - V CE h FE - I C 1k I B =-4.0mA I B =-3.0mA -0.3 I B =-2.5mA I B =-2.0mA I B =-1.5mA -0.2 I B =-1.0mA -0.1 0 I B =-0.5mA 0 -0.4 -0.8 -1.2 -1.6 VCE =-1V 500 I B =-3.5mA -0.4 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) -0.5 300 100 50 30 10 -0.1 -2.0 COLLECTOR-EMITTER VOLTAGE VCE (V) -0.3 -50 -30 SATURATION VOLTAGE V BE(sat), VCE(sat) (mV) COLLECTOR CURRENT I C (mA) -5k -3k VCE =-1V -10 -5 -3 -1 -0.5 -0.3 -0.1 -0.6 -0.8 -1.0 -1k VBE (sat) -500 -300 -100 VCE (sat) -50 -30 -0.3 -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT IC (mA) f T - IC C ob - V CB V CE =-10V 100 50 30 10 -3 -5 -10 -30 -50 -100 COLLECTOR CURRENT I C (mA) 1999. 10. 25 -300 -1K BASE-EMITTER VOLTAGE VBE (V) 300 -1 -100 IC =10I B -10 -0.1 -1.2 COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) -0.4 -30 V BE(sat), VCE(sat) - I C -100 -0.2 -10 COLLECTOR CURRENT I C (mA) I C - V BE 0 -3 -1 Revision No : 1 -300 100 f=1MHz I E =0 50 30 10 5 3 1 -1 -3 -5 -10 -30 -50 COLLECTOR-BASE VOLTAGE VCB (V) 2/2