MPS8550S-D-RTK/P

SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E B L L D ・Complementary to MPS8050S. 3 H G A 2 1 MAXIMUM RATING (Ta=25℃) Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V IC -1.5 A PC * 350 mW Tj 150 ℃ Tstg -55～150 ℃ Collector Current Q P P J UNIT K RATING N SYMBOL C CHARACTERISTIC DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER Collector Power Dissipation Junction Temperature Storage Temperature Range 2. BASE 3. COLLECTOR * PC : Package Mounted On 99.5% Alumina (10×8×0.6㎜) SOT-23 Marking h FE Rank Type Name Lot No. BJ ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -100 nA Emitter Cut-off Current IEBO VEB=-6V, IC=0 - - -100 nA Collector-Base Breakdown Voltage V(BR)CBO IC=-100μA, IE=0 -40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-2mA, IB=0 -25 - - V VCE=-1V, IC=-5mA 45 170 - hFE(2) (Note) VCE=-1V, IC=-100mA 85 160 300 hFE(3) VCE=-1V, IC=-800mA 40 80 - Collector-Emitter Saturation Voltage VCE(sat) IC=-800mA, IB=-80mA - -0.28 -0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=-800mA, IB=-80mA - -0.98 -1.2 V hFE(1) DC Current Gain Base-Emitter Voltage VBE VCE=-1V, IC=-10mA - -0.66 -1.0 V Transition Frequency fT VCE=-10V, IC=-50mA 100 200 - MHz - 15 - pF Collector Output Capacitance Note : hFE(2) Classification 2009. 6. 10 Cob VCB=-10V, f=1MHz, IE=0 B:85～160 , C : 120～200 , D : 160～300 Revision No : 2 1/2 MPS8550S I C - VCE h FE - I C 1000 I B =-3.5mA -0.4 I B =-3.0mA -0.3 I B =-2.5mA I B =-2.0mA I B =-1.5mA -0.2 I B =-1.0mA -0.1 0 -0.4 -0.8 -1.2 -1.6 10 0.1 -2.0 1000 V BE(sat), VCE(sat) - I C 10000 VCE =-1V -10 -5 -3 -1 -0.5 -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 VBE (sat) 100 VCE (sat) 10 1 10 100 1000 COLLECTOR CURRENT IC (mA) fT - IC C ob - VCB COLLECTOR OUTPUT CAPACITANCE Cob (pF) BASE-EMITTER VOLTAGE VBE (V) V CE =-10V 100 50 30 10 -3 -5 -10 -30 -50 -100 COLLECTOR CURRENT I C (mA) Revision No : 2 -300 10000 IC =10IB 1000 1 0.1 -1.2 300 2009. 6. 10 100 I C - VBE -50 -30 -1 10 COLLECTOR CURRENT I C (mA) -100 0 1 COLLECTOR-EMITTER VOLTAGE VCE (V) SATURATION VOLTAGE V BE(sat), VCE(sat) (mV) COLLECTOR CURRENT I C (mA) 100 I B =-0.5mA 0 TRANSITION FREQUENCY f T (MHz) VCE =-1V I B =-4.0mA DC CURRENT GAIN h FE COLLECTOR CURRENT I C (A) -0.5 10000 100 f=1MHz I E =0 50 30 10 5 3 1 -1 -3 -5 -10 -30 -50 COLLECTOR-BASE VOLTAGE VCB (V) 2/2