MPS8550_10

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURE ・Complementary to MPS8050. B MPS8550 EPITAXIAL PLANAR PNP TRANSISTOR C A N MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW SYMBOL VCBO VCEO VEBO IC PC* Tj Tstg RATING -40 -25 -6 -1.5 625 mW 400 150 -55～150 ℃ ℃ UNIT V V V A L K D G E H F F M 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO hFE(1) DC Current Gain hFE(2) (Note) hFE(3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(2) Classification VCE(sat) VBE(sat) VBE fT Cob TEST CONDITION VCB=-35V, IE=0 VEB=-6V, IC=0 IC=-100μ IE=0 A, IC=-2mA, IB=0 VCE=-1V, IC=-5mA VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA IC=-800mA, IB=-80mA IC=-800mA, IB=-80mA VCE=-1V, IC=-10mA VCE=-10V, IC=-50mA VCB=-10V, f=1MHz, IE=0 MIN. -40 -25 45 85 40 100 TYP. 170 160 80 -0.28 -0.98 -0.66 200 15 MAX. -100 -100 300 -0.5 -1.2 -1.0 V V V MHz pF UNIT nA nA V V B:85～160 , C : 120～200 , D : 160～300 2010. 6. 10 Revision No : 3 1/2 MPS8550 I C - V CE -0.5 COLLECTOR CURRENT I (A) C I B =-4.0mA I B =-3.0mA h FE - I C 1000 DC CURRENT GAIN h FE I B =-3.5mA I B =-2.5mA I B =-2.0mA I B =-1.5mA I B =-1.0mA VCE =-1V -0.4 -0.3 -0.2 -0.1 0 100 I B =-0.5mA 0 -0.4 -0.8 -1.2 -1.6 -2.0 10 0.1 1 10 100 1000 10000 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) I C - V BE COLLECTOR CURRENT I C (mA) -100 -50 -30 -10 -5 -3 -1 -0.5 -0.3 -0.1 VCE =-1V V BE(sat), VCE(sat) - I C 10000 SATURATION VOLTAGE V BE(sat), VCE(sat) (mV) VBE (sat) IC =10IB 1000 100 VCE (sat) 10 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V) 1 0.1 1 10 100 1000 10000 COLLECTOR CURRENT IC (mA) f T - IC COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) 300 V CE =-10V C ob - V CB 100 50 30 f=1MHz I E =0 100 50 30 10 5 3 10 1 -1 -3 -5 -10 -30 -50 COLLECTOR-BASE VOLTAGE VCB (V) -1 -3 -5 -10 -30 -50 -100 -300 COLLECTOR CURRENT I C (mA) 2010. 6. 10 Revision No : 3 2/2