SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION. FEATURE
・Complementary to MPS8050.
B
MPS8550
EPITAXIAL PLANAR PNP TRANSISTOR
C
A
N
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW SYMBOL VCBO VCEO VEBO IC PC* Tj Tstg RATING -40 -25 -6 -1.5 625 mW 400 150 -55~150 ℃ ℃ UNIT V V V A
L
K D
G
E
H
F
F
M
1
2
3
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00
J
1. EMITTER 2. BASE 3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO hFE(1) DC Current Gain hFE(2) (Note) hFE(3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(2) Classification VCE(sat) VBE(sat) VBE fT Cob TEST CONDITION VCB=-35V, IE=0 VEB=-6V, IC=0 IC=-100μ IE=0 A, IC=-2mA, IB=0 VCE=-1V, IC=-5mA VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA IC=-800mA, IB=-80mA IC=-800mA, IB=-80mA VCE=-1V, IC=-10mA VCE=-10V, IC=-50mA VCB=-10V, f=1MHz, IE=0 MIN. -40 -25 45 85 40 100 TYP. 170 160 80 -0.28 -0.98 -0.66 200 15 MAX. -100 -100 300 -0.5 -1.2 -1.0 V V V MHz pF UNIT nA nA V V
B:85~160 , C : 120~200 , D : 160~300
2010. 6. 10
Revision No : 3
1/2
MPS8550
I C - V CE
-0.5 COLLECTOR CURRENT I (A) C
I B =-4.0mA I B =-3.0mA
h FE - I C
1000 DC CURRENT GAIN h FE
I B =-3.5mA I B =-2.5mA I B =-2.0mA I B =-1.5mA I B =-1.0mA VCE =-1V
-0.4 -0.3 -0.2 -0.1 0
100
I B =-0.5mA
0
-0.4
-0.8
-1.2
-1.6
-2.0
10 0.1
1
10
100
1000
10000
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I C (mA)
I C - V BE
COLLECTOR CURRENT I C (mA) -100 -50 -30 -10 -5 -3 -1 -0.5 -0.3 -0.1
VCE =-1V
V BE(sat), VCE(sat) - I C
10000 SATURATION VOLTAGE V BE(sat), VCE(sat) (mV)
VBE (sat) IC =10IB
1000
100
VCE (sat)
10
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
BASE-EMITTER VOLTAGE VBE (V)
1 0.1
1
10
100
1000
10000
COLLECTOR CURRENT IC (mA)
f T - IC
COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) 300
V CE =-10V
C ob - V CB
100 50 30
f=1MHz I E =0
100 50 30
10 5 3
10
1 -1 -3 -5 -10 -30 -50 COLLECTOR-BASE VOLTAGE VCB (V)
-1
-3 -5
-10
-30 -50 -100
-300
COLLECTOR CURRENT I C (mA)
2010. 6. 10
Revision No : 3
2/2
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