MPSA06

SEMICONDUCTOR TECHNICAL DATA DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. B MPSA06 EPITAXIAL PLANAR NPN TRANSISTOR C Complementary to MPSA56. N K D E G A FEATURES MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 80 80 6 500 -500 625 150 -55 150 UNIT V V M H F F V mA mA mW L 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ) TEST CONDITION VCB=80V, IE=0 VCE=60V, IB=0 IC=1mA, IB=0 VCE=1V, IC=10mA VCE=1V, IC=100mA IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=2V, IC=10mA MIN. 80 100 100 100 TYP. MAX. 100 100 0.25 1.2 V V MHz UNIT nA nA V ICBO ICEO SYMBOL V(BR)CEO hFE(1) hFE(2) VCE(sat) VBE fT 1999. 11. 30 Revision No : 3 1/1