MPSA13

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. B MPSA13/14 EPITAXIAL PLANAR NPN TRANSISTOR C A N K D E G MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCES VEBO IC PC Tj Tstg RATING 30 30 10 500 625 150 -55 150 UNIT V V M H F F V mA mW L 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector-Emitter Breakdown Voltage Emitter Cut-off Current Emitter Cut-off Current MPSA13 DC Current Gain MPSA14 MPSA13 MPSA14 Collector-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwith Product hFE ) TEST CONDITION IC=0.1mA VCB=30V VEB=10V IC=10mA, VCE=5V MIN. 30 5,000 10,000 10,000 20,000 125 TYP. MAX. 100 100 1.5 2.0 V V MHz UNIT V nA nA SYMBOL VCES ICBO IEBO IC=100mA, VCE=5V VCE(sat) VBE fT IC=100mA, IB=0.1mA IC=100mA, VCE=5V IC=10mA, f=100MHz, VCE=5V 2000. 2. 26 Revision No : 3 1/2 MPSA13/14 h FE - I 200K DC CURRENT GAIN h FE 100K 50K 30K C f T - IC TRANSITION FREQUENCY f T (MHz) 500 VCE =5V VCE =5V 300 100 10K 5K 3K 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (A) 50 30 1 3 5 10 30 50 100 COLLECTOR CURRENT I C (mA) V BE (sat), VCE (sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VBE (sat), VCE (sat) (V) COLLECTOR CURRENT I C (mA) 5 3 I C =1000I B I C - V BE 200 100 50 30 VCE =5V VBE (sat) 1 0.5 0.3 0.2 5 10 VCE (sat) 10 5 3 1 30 50 100 300 500 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V) 2000. 2. 26 Revision No : 3 2/2