SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION. FEATURES
High Breakdown Voltage. Collector Power Dissipation : PC=625mW.
B
MPSA44/45
EPITAXIAL PLANAR NPN TRANSISTOR
C
A
N K E G
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range MPSA44 MPSA45 MPSA44 MPSA45
)
SYMBOL VCBO RATING 500 400 400 350 6 300 625 150 -55 150 UNIT V
D
H
F
F
L
VCEO VEBO IC PC Tj Tstg
M
C
V V mA mW
1
2
3
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00
J
1. EMITTER 2. BASE 3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (1) MPSA44 MPSA45 MPSA44 MPSA45
)
SYMBOL V(BR)CBO TEST CONDITION IC=100 A, IE=0 MIN. 500 400 400 350 400 6.0 TYP. MAX. UNIT V
V(BR)CEO V(BR)CES V(BR)EBO
IC=1mA, IB=0 IC=100 A, IB=0 IE=10 A, IC=0 VCB=400V, IE=0 VCB=320V, IE=0 VCE=400V, IB=0 VCE=320V, IB=0 VEB=4V, IC=0 VCE=10V, IC=1mA
-
100 100 500 500 100 200 0.5 0.75
V V V nA
Collector-Emitter Breakdown Voltage (2) Emitter-Base Breakdown Voltage Collector Cut off Current MPSA44 MPSA45 MPSA44 MPSA45
ICBO
Collector Cut off Current Emitter Cutoff Current
ICES IEBO
40 50 45 40 -
-
nA nA
DC Current Gain
*
hFE
VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage *
*
VCE(sat) VBE(sat)
IC=10mA, IB=1mA IC=10mA, IB=1mA
V V
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
1997. 10. 21
Revision No : 2
1/3
MPSA44/45
h FE - I C
200 180 DC CURRENT GAIN h FE 160 140 120 100 80 60 40 20 0 1 10 100 1 1k 0k COLLECTOR CURRENT I C (A)
COMMON EMITTER VCE =10V
TURN-ON SWITCHING CHARACTERISTICS
10 5 3 TIME t (µS)
V CC =150V I C /I B =10 Ta=25 C V BE (OFF)=4V
1 0.5 0.3
td tr
0.1 1 3 10
30
100
COLLECTOR CURRENT I C (mA)
TURN-OFF SWITCHING CHARACTERISTICS
100 50 30 TIME t (µS) 10 5 3 1 0.5 0.3 0.1 1 3 10 30 100 COLLECTOR CURRENT I C (mA)
tf ts
C ib , C ob - V CB
1k CAPACITANCE C ib (pF), Cob (pF) 500 300 100 50 30 10 5 3 1 0.1 1 10 100 1k COLLECTOR-BASE VOLTAGE VCB (V)
C ib Ta=25 C f=1MHz
VCC =150V I C /I B =10 Ta=25 C
C ob
1.0 SATURATION VOLTAGE V BE(sat) , V CE(sat) (V) 0.8 0.6 0.4 0.2 0 0.1
COLLECTOR EMITTER VOLTAGE VCE (V)
V BE(sat) , V CE(sat) - I C
Ta=25 C VBE(sat) @I C /I B =10
COLLECTOR SATURATION REGION
0.5 0.4 0.3 0.2 0.1 0 10 100 1k 10k 100k BASE CURRENT I B (µA)
Ta=25 C
I C =1mA
I C =10mA
I C =50mA
VBE(on)
@VCE =10V
V CE(sat) @I C /IB =10
1
10
100
1k
COLLECTOR CURRENT I C (mA)
1999. 11. 30
Revision No : 3
2/3
MPSA44/45
h FE - I C
SMALL SIGNAL CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 100 30 10 3 1 0.3 0.1
VCE =10V f=10MHz Ta=25 C
SAFE OPERATING AREA
100k 3k 1k 300 100 30 10 3 1 1 3 10 30
MPSA45 1ms 100µs 1s Valld for Duty < 10%
Ta
=2
Tc 5 C
=2
5
C
0.1
1
10
100
1k
100
300
1k
3k
10k
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
1997. 10. 21
Revision No : 2
3/3
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