SEMICONDUCTOR
TECHNICAL DATA
SWITCHING TYPE POWER SUPPLY APPLICATIONS.
SMFB16
SCHOTTKY BARRIER TYPE DIODE
2 E
FEATURES
・For Use in Low Voltage, High Frequency inverters, Free Wheeling, and Polarity Protection Applications.
A B
1
APPLICATION
・Switching Power Supply. ・Reversed Battery Connection Protection. ・DC/DC Converter. ・Cellular Phones.
C D
H G 1. ANODE 2. CATHODE
DIM A B C D E F G H
MILLIMETERS _ 2.6 + 0.05 _ 3.5+ 0.1 _ 0.9 + 0.05 _ 1.6 + 0.05 _ 0.65+ 0.05 _ 0.11+ 0.05 0 ~ 0.1 _ 0.98+ 0.05
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC Maximum Repetitive Peak Reverse Voltage Average Output Rectitifed Current Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Junction Temperature Storage Temperature Range SYMBOL VRRM IO IFSM Tj Tstg RATING 60 1 30 -65~150 -65~150 UNIT V A A ℃ ℃
SMF
Marking
E F
Lot No.
S16
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC Peak Forward Voltage Repetitive Peak Reverse Current Total Capacitance SYMBOL VFM IRRM CT Rth(j-1) Thermal Resistance Rth(j-a) TEST CONDITION IFM=1.0A VRRM=Rated VR=10V, f=1MHz Junction to lead Junction to ambient (on a grass-epoxy board) MIN. TYP. 0.49 7 40 MAX. 0.55 50 20 140 ℃/W UNIT V ㎂ pF
2009. 4. 3
Revision No : 0
1/2
SMFB16
I F - VF
PEAK SURGE FORWARD CURRENT I FSM (A) 1 FORWARD CURRENT I F (A) 100 80 60 40 20 0 1
SURGE FORWARD CURRENT (NON - REPETITIVE)
Ta=25 C f=60Hz
0.1
Ta = 125 C
Ta = -25 C
0.01
Ta = 25 C
0.001
0
0.2
0.4
0.6
10 NUMBER OF CYCLES
100
FORWARD VOLTAGE V F (V)
2009. 4. 3
Revision No : 0
2/2
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