SMFB23L

SEMICONDUCTOR TECHNICAL DATA SWITCHING TYPE POWER SUPPLY APPLICATIONS. SMFB23L SCHOTTKY BARRIER TYPE DIODE 2 FEATURES Low Profile Surface Mount Package. Low Power Loss, High Efficiency. Low Forward Voltage : VFM=0.36V(Max.) E APPLICATION Switching Power Supply. Reversed Battery Connection Protection. DC/DC Converter. Cellular Phones. 1 C D DIM A B C D E F G H H G 1. ANODE 2. CATHODE MILLIMETERS _ 2.6 + 0.05 _ 3.5+ 0.1 _ 0.9 + 0.05 _ 1.6 + 0.05 _ 0.65+ 0.05 _ 0.11+ 0.05 0 ~ 0.1 _ 0.98+ 0.05 MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL VRRM IO IFSM Tj Tstg RATING 30 1.5 33 -40 125 -40 125 UNIT V A A Maximum Repetitive Peak Reverse Voltage Average Output Rectitifed Current Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Junction Temperature Storage Temperature Range SMF Marking E F Lot No. 23L Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Peak Forward Voltage Repetitive Peak Reverse Current ) TEST CONDITION IFM=1.5A VRRM=Rated Junction to lead Junction to ambient (on a grass-epoxy board) MIN. TYP. MAX. 0.36 1.0 20 140 /W UNIT V mA SYMBOL VFM IRRM Rth(j-1) Thermal Resistance Rth(j-a) 2008. 9. 11 Revision No : 5 1/2 SMFB23L AVERAGE FORWARD POWER DISSIPATION P F(AV) (W) I F - VF 10 FORWARD CURRENT I F (A) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 T j =125 C 25 C P F(AV) - I F(AV) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.4 0.8 1.2 1.6 0 DC 180 120 α=60 RECTANGULAR WAVEFORM α 360 CONDUCTION ANGLE α 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 2.0 2.4 FORWARD VOLTAGE V F (V) AVERAGE FORWARD CURRENT I F(AV) (A) MAXIMUM ALLOWABLE TEMPERATURE Ta MAX ( C) SURGE FORWARD CURRENT (NON - REPETITIVE) PEAK SURGE FORWARD CURRENT I FSM (A) 40 Ta=25 C f=60Hz Ta 140 120 100 80 60 40 20 0 0 0 α 360 - I F(AV) ON A GRASS-EPOXY BOARD 30 α=60 RECTANGULAR WAVEFORM I F(AV) 20 DC 120 180 10 0 1 10 NUMBER OF CYCLES 100 CONDUCTION ANGLE α VR=15V 0.4 0.8 1.2 1.6 2.0 2.4 AVERAGE FORWARD CURRENT I F(AV) (A) 2008 9. 11 Revision No : 5 2/2