SEMICONDUCTOR
TECHNICAL DATA
SWITCHING TYPE POWER SUPPLY APPLICATIONS.
SMFB23
SCHOTTKY BARRIER TYPE DIODE
FEATURES
Low Profile Surface Mount Package. Low Forward Voltage.
A B
Low Power Loss, High Efficiency.
APPLICATION
Switching Power Supply. Reversed Battery Connection Protection. DC/DC Converter. Cellular Phones.
G H
C D DIM A B C D E F G H
MILLIMETERS _ 2.6 + 0.05 _ 3.5 + 0.1 _ 0.9 + 0.05 _ 1.6 + 0.05 _ 0.65 + 0.05 _ 0.11 + 0.05 0 ~ 0.1 _ 0.98 + 0.05
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL VRRM IO IFSM Tj Tstg RATING 30 2 33 -40 125 -40 150 UNIT V A A
SMF
Maximum Repetitive Peak Reverse Voltage Average Output Rectitifed Current Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Junction Temperature Storage Temperature Range
Marking
E
F
E
Lot No.
B23
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Peak Forward Voltage Repetitive Peak Reverse Current
)
TEST CONDITION IFM=2A VRRM=Rated Junction to lead Junction to ambient (on a ceramic board) Junction to ambient (on a grass-epoxy board) MIN. TYP. MAX. 0.42 1.0 20 70 135 /W UNIT V mA
SYMBOL VFM IRRM Rth(j-1)
Thermal Resistance
Rth(j-a) Rth(j-a)
2008. 9. 11
Revision No : 2
1/2
SMFB23
AVERAGE FORWARD POWER DISSIPATION P F(AV) (W)
I F - VF
10 FORWARD CURRENT I F (A) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01
T j =125 C 25 C
P F(AV) - I F(AV)
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.4 0.8 1.2 1.6
0
DC
180 120 α=60
RECTANGULAR WAVEFORM α
360
CONDUCTION ANGLE α
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
2.0
2.4
FORWARD VOLTAGE V F (V)
AVERAGE FORWARD CURRENT I F(AV) (A)
MAXIMUM ALLOWABLE TEMPERATURE Ta MAX ( C)
SURGE FORWARD CURRENT (NON - REPETITIVE)
PEAK SURGE FORWARD CURRENT I FSM (A) 40
Ta=25 C f=60Hz
Ta
140 120 100 80 60 40 20 0 0
0 α 360
-
I F(AV)
ON A GRASS-EPOXY BOARD
30
α=60
RECTANGULAR WAVEFORM I F(AV)
20
DC 120 180
10
0 1 10 NUMBER OF CYCLES 100
CONDUCTION ANGLE α VR=15V
0.4
0.8
1.2
1.6
2.0
2.4
AVERAGE FORWARD CURRENT I F(AV) (A)
2008. 9. 11
Revision No : 2
2/2
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