TT1A6C

SEMICONDUCTOR TECHNICAL DATA AC POWER CONTROL APPLICATION. B TT1A6C Bi-Directional Triode Thyristor 1A Mold TRIAC C FEATURES ・R.M.S on-State Current : IT(RMS)=1A. ・High Commutation (dv/dt) K D E G J N A ・Repetitive Peak Off-state Voltage : VDRM=600V. APPLICATIONS ・Switching Mode Power Supply ・Speed Control of Small Motors ・Solid State Relay ・Light Dimmer ・Temperature Control of Heater M F H F ・Washing Machine L 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 1. T1 2. GATE 3. T2 TO-92 MAXIMUM RATINGS (Ta=25℃) CHARACTERISTIC Repetitive Peak Off-state Voltage R.M.S On-state Current (Full Sine Waveform Tc=50℃) Peak One Cycle Surge On-state Current (Non-Repetitive) I t Limit Value (t=8.3mS) 2 SYMBOL VDRM IT(RMS) ITSM It 2 RATING 600 1 10 (60Hz 1 Cycle) 0.6 1 0.1 5 1 -40～125 UNIT V A A A2S W W V A ℃ Peak Gate Power Dissipation Average Gate Power Dissipation (TC=80℃, t≦8.3mS) Peak Gate Voltage Peak Gate Current Junction Temperature (t≦2.0㎲, TC=80℃) (t≦2.0㎲, TC=80℃) PGM PG(AV) VGM IGM Tj 2009. 2. 19 Revision No : 0 1/3 TT1A6C ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Repetitive Peak Off-state Current Ⅰ Gate Trigger Voltage Ⅱ Ⅲ Ⅳ Ⅰ Gate Trigger Current Ⅱ Ⅲ Ⅳ Peak On-State Voltage Gate Non-Trigger Voltage Holding Current Thermal Resistance VTM VGD IH Rth(j-c) Rth(j-a) ITM=1A VD=12V, RL=100Ω, Tj=110℃ VD=12V, ITM=±200mA Junction to Case, AC Junction to Ambient, AC IGT VD=12V, RL=100Ω VGT SYMBOL IDRM TEST CONDITION VDRM=Rated, Gate open T2(+), Gate(+) T2(+), Gate(-) T2(-), Gate(-) T2(-), Gate(+) T2(+), Gate(+) T2(+), Gate(-) T2(-), Gate(-) T2(-), Gate(+) MIN. 0.1 TYP. MAX. 10 2.0 2.0 V 2.0 2.5 5.0 5.0 mA 5.0 7 1.9 10 75 150 ℃/W V V mA UNIT μ A 2009. 2. 19 Revision No : 0 2/3 TT1A6C INSTANTANEOUS GATE VOLTAGE νG (V) GATE TRIGGER CHARACTERISTIC 10 INSTANTANEOUS ON-STATE CURRENT ι T (A) VGM =6V VGM P G(AV) =0.1W P GM =1W ι 5 3 T j =25 C T − νT 5 -40 C V GT 3 25 C VGT -40 C I GT 25 C I GT 1 0.5 0.3 I GM 1 0.5 0.3 0.1 0.05 0.03 0.4 0.8 1.2 1.6 2.0 2.4 2.8 INSTANTANEOUS ON-STATE VOLTAGE ν T (V) VGD =0.2V 0.1 1 3 10 30 100 300 1K INSTANTANEOUS GATE CURRENT ι G (mA) PEAK SURGE ON-STATE CURRENT I TSM (A) SURGE ON-STATE CURRENT (NON-REPETITIVE) 10 AVERAGE ON-STATE POWER DISSIPATION P T(AV) (W) 8 6 4 2 0 1 3 5 10 30 50 100 NUMBER OF CYCLES AT 60Hz 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 P T(AV) - I T(RMS) 0.4 0.6 0.8 1.0 1.2 1.4 R.M.S ON-STATE CURRENT I T(RMS) (A) MAXIMUM ALLOWABLE CASE AMBIENT TEMPERATURE Tc MAX, Ta MAX ( C) Tc MAX, Ta MAX - I T(RMS) TRANSIENT THERMAL IMPEDANCE r th(j-c) , r th(j-a) ( C/W) 140 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 R.M.S ON-STATE CURRENT I T(RMS) (A) Ta MAX Tc MAX r th(j-c) , r th(j-a) - t 200 (s) r th(j-a) r th(j-c) 100 50 30 (s) 10 5 3 1 1 3 10 30 100 300 1k TIME t (ms and s) (ms) 2009. 2. 19 Revision No : 0 3/3