USFB053

SEMICONDUCTOR TECHNICAL DATA SWITCHING TYPE POWER SUPPLY APPLICATIONS. B A USFB053 SCHOTTKY BARRIER TYPE DIODE G H FEATURES Low Profile Surface Mount Package. Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free Wheeling, and Polarity Protection Applications. F E 2 1 CATHODE MARK C ED C APPLICATION Switching Power Supply. Reversed Battery Connection Protection. DC/DC Converter. J I DIM A B C D E MILLIMETERS _ 1.9 + 0.1 _ 2.5 + 0.1 _ 0.61 + 0.05 _ 0.8 + 0.1 _ 0.91 + 0.05 _ 1.2 + 0.1 _ 1.3 + 0.1 _ 0.46 + 0.1 _ 0.11 + 0.05 _ 0.6 + 0.1 1. ANODE Cellular Phones. F G H I J 2. CATHODE MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL VRRM IO IFSM PD * Tj Tstg RATING 30 0.5 5 667 -40 125 -40 125 UNIT V A A mW USF Maximum Repetitive Peak Reverse Voltage Average Output Rectified Current Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Power Dissipation Junction Temperature Storage Temperature Range Marking Type Name Lot No. * Mounted on a glass epoxy board (Soldering land : 6mm 6mm) 53 CATHODE MARK ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Peak Forward Voltage Repetitive Peak Reverse Current Junction Capacitance ) TEST CONDITION IFM=0.5A VRRM=30V VR=10V, f=1.0MHz MIN. TYP. 0.35 40 30 MAX. 0.39 200 UNIT V A pF SYMBOL VFM IRRM Cj 2005. 12. 1 Revision No : 1 1/2 USFB053 I F - VF INSTANTANEOUS FORWARD CURRENT I F (A) JUNCTION CAPACITANCE CJ (pF) 1000 Ta=150 Ta=125 Ta=75 CJ 1000 - VR f=1MHz Ta=25 C 100 Ta=25 100 10 1 0 100 200 300 400 500 10 1 10 20 30 INSTANTANEOUS FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) SURGE FORWARD CURRENT (NON - REPETITIVE) PEAK SURGE FORWARD CURRENT I FSM (A) 20 Ta=25 C Ta MAX - I F(AV) MAXIMUM ALLOWABLE AMBIENT TEMPERATURE Ta MAX ( C) 125 0A IO VR t T D=t/T VR=15V Tj=125 C 8.3ms 8.3ms 100 75 50 25 Sin ( =180) 0V 1cyc. 10 D=1/2 DC 0 1 10 NUMBER OF CYCLES 100 0 0 0.4 0.8 1.2 1.6 2.0 AVERAGE FORWARD CURRENT I F(AV) (A) 2005. 12. 1 Revision No : 1 2/2