USFB13L

SEMICONDUCTOR TECHNICAL DATA SWITCHING TYPE POWER SUPPLY APPLICATIONS. B A USFB13L SCHOTTKY BARRIER TYPE DIODE G H FEATURES Low Profile Surface Mount Package. Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free Wheeling, and Polarity Protection Applications. F E 2 1 CATHODE MARK C ED C APPLICATION Switching Power Supply. Reversed Battery Connection Protection. DC/DC Converter. J I DIM A B C D E MILLIMETERS _ 1.9 + 0.1 _ 2.5 + 0.1 _ 0.61 + 0.05 _ 0.8 + 0.1 _ 0.91 + 0.05 _ 1.2 + 0.1 _ 1.3 + 0.1 _ 0.46 + 0.1 _ 0.11 + 0.05 _ 0.6 + 0.1 1. ANODE Cellular Phones. F G H I J 2. CATHODE MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL VRRM IO IFSM PD * Tj Tstg RATING 30 1 22 667 -40 125 Type Name UNIT V A A mW USF Maximum Repetitive Peak Reverse Voltage Average Output Rectified Current Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Power Dissipation Junction Temperature Storage Temperature Range Marking Lot No. -40 125 * Mounted on a glass epoxy board (Soldering land : 6mm 6mm) BB CATHODE MARK ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) TEST CONDITION IFM=0.1A IFM=0.7A IFM=1.0A VRRM=5V VRRM=30V VR=10V, f=1.0MHz MIN. TYP. 0.25 0.33 0.39 50 0.5 40 MAX. 0.37 1 A mA pF V UNIT SYMBOL VFM (1) Peak Forward Voltage VFM (2) VFM (3) IRRM (1) Repetitive Peak Reverse Current IRRM (2) Junction Capacitance Cj 2005. 12. 1 Revision No : 2 1/3 USFB13L AVERAGE FORWARD POWER DISSIPATION P F(AV) (W) I F - VF INSTANTANEOUS FORWARD CURRENT I F (A) 10 3 T j =125 C P F(AV) - I F(AV) 0.5 DC 0.4 120 180 1 0.3 0.1 0.03 0.01 0 0.2 0.4 0.6 0.8 1.0 75 C 25 C 0.3 0.2 0.1 0 0 0.2 α=60 RECTANGULAR WAVEFORM 0 α 360 CONDUCTION ANGLE α 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE VF (V) AVERAGE FORWARD CURRENT I F(AV) (A) SURGE FORWARD CURRENT (NON - REPETITIVE) PEAK SURGE FORWARD CURRENT I FSM (A) 28 24 20 16 12 8 4 0 1 10 NUMBER OF CYCLES 100 Ta=25 C f=60Hz Ta MAX - I F(AV) MAXIMUM ALLOWABLE AMBIENT TEMPERATURE Ta MAX ( C) 140 120 100 80 60 40 20 0 0 RECTANGULAR WAVEFORM I 0 α 360 F(AV) DEVICE MOUNTED ON A CERAMIC BOARD (BOARD SIZE : 50mmx50mm) DC α=180 CONDUCTION ANGLE α V R =15V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE FORWARD CURRENT I F(AV) (A) C j - VR JUNCTION CAPACITANCE Cj (pF) 1000 f =1MHz IR - Tj 100 REVERSE CURRENT IR (mA) VR = 30V 10 5V 3V 10V 20V 15V 100 1 0.1 10 1 10 REVERSE VOLTAGE VR (V) 100 0.01 0 25 50 75 100 125 150 JUNCTION TEMPERATURE Tj ( C) 2005. 12. 1 Revision No : 2 2/3 USFB13L rth(j-a) - t Transient thermal impedance rth (j-a) ( C /W) PR (AV) -VR 10000 REVERSE CURRENT IR (mA) 1000 (1) Device mounted on a ceramic board Soldering land: 2.0 mm x2.0mm (2) Device mounted on glass-epoxy board Soldering land: 6.0 mm x6.0mm (3) Device mounted on glass-epoxy board Standard Soldering Pad 2.5 2.0 1.5 1.0 Rectangular wave form 0 a 360 Conduction angle : a Tj=125 C DC 300 240 180 120 60 (3) (2) 100 (1) 10 0.5 0.0 1 0.001 0.01 0.1 1 Time t (S) 10 100 1000 0 10 20 30 Revers voltage VR (V) 2005. 12. 1 Revision No : 2 3/3