L1GN30D334KA04

厂商：
KEMET(基美)
封装：
CAP_25.64X12.7MM_TM
描述：
贴片电容（MLCC） CAP_25.64X12.7MM_TM 330nF ±10% 1KV C0G(NP0)

数据手册：

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数据手册
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L1GN30D334KA04 数据手册

KEMET Part Number: L1GN30D334KA04 KPS-MCC Indust C0G HT200C, Ceramic, 0.33 uF, 10%, 1000 VDC, C0G General Information Series: KPS-MCC Indust C0G HT200C Style: Leaded Stacked Chip Low ESR, Stacked Ceramic Chips 200C, Low ESR, High Thermal Stability, Bulk Capacitance With Exemptions Description: Features: RoHS: REACH: SCIP Number: Termination: Lead: AEC-Q200: Dimensions D Notes: 25.64mm +/-0.635mm L 6.35mm MIN H 2.54mm NOM F 1.397mm +/-0.25mm A 5.3mm MAX B 7.078mm MAX C 11.43mm +/-0.635mm E 12.7mm MAX K 0.5mm NOM Packaging Quantity: Waffle, Box No Number of chips in this stack: 4. Capacitance: 0.33 uF Capacitance Tolerance: 10% Voltage DC: Dielectric Withstanding Voltage: Temperature Range: 1000 VDC Dissipation Factor: Packaging: Straight Leads Specifications Temperature Coefficient: Packaging Specifications SVHC (Pb – CAS 7439-92-1) 297427bb-2a48-4853b594-641304a2cc24 Silver Aging Rate: Insulation Resistance: 1200 VDC -55/+200°C C0G 0.1% 1 kHz 25C 0% Loss/Decade Hour 3.03 GOhms 16 Statements of suitability for certain applications are based on our knowledge of typical operating conditions for such applications, but are not intended to constitute - and we specifically disclaim - any warranty concerning suitability for a specific customer application or use. This Information is intended for use only by customers who have the requisite experience and capability to determine the correct products for their application. Any technical advice inferred from this Information or otherwise provided by us with reference to the use of our products is given gratis, and we assume no obligation or liability for the advice given or results obtained. Generated 11/01/2021 - 29a3c826-a8ec-4384-b369-24707a1df8c6 © 2006 - 2021 KEMET

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L1GN30D334KA04

物料型号为 L1GN30D334KA04，属于 KEMET 公司生产的 KPS-MCC Indust COG HT200C 系列。

该器件是低等效串联电阻（ESR）的堆叠陶瓷芯片电容器，具有200°C的高热稳定性和大容量特性。

其主要特点包括低ESR、高热稳定性、大容量和符合RoHS标准（有豁免）。

引脚分配为直引线，端面镀银处理。

该器件未通过 AEC-Q200 认证，且包含铅（Pb）和镉（Cd）等有害物质。

参数特性包括0.33微法拉的电容值、10%的公差、1000VDC的直流电压、1200VDC的介质耐压、-55°C至+200°C的工作温度范围、COG的温度系数、0.1%@1kHz25°C的损耗因数、0%的老化率以及3.03G欧姆的绝缘电阻。

功能详解为该电容器适用于高可靠性和高稳定性的应用场景，如工业和汽车领域。

应用信息指出，该电容器适用于需要高容量和高热稳定性的应用。

封装信息为瓦夫纸盒包装，每盒16个。

请注意，以上信息仅供参考，具体应用时需结合实际工作条件和要求。