1N5711WS

S MD Type SURFACE MOUNT SCHOTTKY BARIER DIODE 1N5711WS Diodes SOD-323 +0.1 1.7-0.1 Unit: mm Features Low Forward Voltage Drop Guard Ring Construction for Transient Prote Fast Switching Speed Low Capacitance Surface Mount Package ldeally Suited for Automatic Insertion 0.475 +0.1 2.6-0.1 +0.05 0.3-0.05 +0.05 0.85-0.05 1.0max 0.375 Absolute Maximum Ratings Ta = 25 Paramater Peak Repetitive Reverse voltage Working Peak Reverse Voltage DC Blocking Volatge RMS Reverse Voltage Forward Continuous Current Power Dissipation (Note1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Storage Temperature Range Note: 1. Part mounted on FR-4 PC board with recommended pad layout. Symbol VRRM VRWM VR VR(RMS) IFM Pd RèJA Tj TSTG 49 15 150 650 -55 to+125 -55 to+150 V mA mW /W 70 V Value Unit Electrical Characteristics Ta = 25 Characteristic Reverse BreakdownVoltage (Note 2) Reverse Leakage Current (Note 2) Forward Voltage Drop (Note 2) Total Capacitance Reverse Recovery Time Note: 2. Measured with IF =IR = 10 mA,IRR = 0.1 x IR , R L = 100 Symbol V (BR)R IR VF CT trr Test Condition IR = 10 A Min 70 200 0.41 1.00 2.0 1.0 pF ns TYP Max Unit V nA V V R = 50 V IF = 1.0 mA IF = 15 mA V R = 0 V, f = 1.0 MHz IF =IR = 5.0 mA Irr = 0.1 x IR , R L = 100 . Marking Marking SA +0.05 0.1-0.02 +0.1 1.3-0.1 www.kexin.com.cn 1