1N5817

S MD Type Schottky Barrier Rectifier Diodes 1N5817-1N5819 DO-214AC(SMA) 4.597 3.988 Diodes Unit: mm 3.93 3.73 Features For Surface Mounted Applications Metal Silicon Junction, Majority Carrier Conduction Low Power Loss, High Efficiency High Forward Surge Current Capability 1.575 1.397 2 1 2.896 2.489 1.67 1.47 5.283 4.775 2.38 2.18 5.49 5.29 Recommended Land Pattern 2.438 1.981 1.524 0.762 0.203 0.051 0.305 0.152 Maximum Ratings and Electrical Characteristics @ Ta = 25 Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum InstantaneousForward Voltage at 1.0A Maximum DC Reverse Current TA=25 At Rated DC Blocking Voltage TA=100 CJ R JA Symbol 1N5817 VRRM VRMS VDC I(AV) IFSM VF IR 0.45 20 14 20 Rating 1N5818 30 21 30 1.0 40 0.55 0.5 6.0 110 88.0 -65 to +125 -65 to +150 0.55 1N5819 40 28 40 Unit V A A V mA pF /W Typical Junction Capacitance *1 Typical Thermal Resistance *2 Operating Runction Temperature Range Storage Temperature Range *1 Measured at 1Mz and applied reverse voltage of 4.0V D.C. *2 P.C.B mounted with 0.2X0.2"(5.0x5.0mm)copper pad areas TJ TSTG Marking Part NO. Marking 1N5817 SS12 1N5818 SS13 1N5819 SS14 www.kexin.com.cn 1 SMD Type 1N5817-1N5819 Electrical Characteristics Curves Diodes 2 www.kexin.com.cn SMD Type 1N5817-1N5819 Diodes www.kexin.com.cn 3