1N5819W

Diodes SMD Type Schottky Barrier Diodes 1N5819W Unit: mm SOD-123 Features Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop Weight:0.01 grams(approx) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VRM 40 V 40 V VR(RMS) 28 V IO 1 A Non-Repetitive Peak reverse voltage Peak repetitive Peak reverse voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR RMS Reverse Voltage Average Rectified Output Current Peak forward surge current @=8.3ms Power Dissipation IFSM 25 A Pd 450 mW 222 K/W Thermal Resistance Junction to Ambient R Storage temperature TSTG JA -65 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Reverse breakdown voltage Testconditons V(BR) IR= 1mA Reverse voltage leakage current IR VR=40V Forward voltage VF Diode capacitance CD Min Typ Max Unit 1 mA 40 V IF=1A 0.6 IF=3A 0.9 VR=4V, f=1MHz 120 V pF Marking Marking SL www.kexin.com.cn 1 Diodes SMD Type 1N5819W Typical Characteristics Fig.1 Forward Current Derating Curve Fig.2 Maximum Non-Repetitive Peak Forward Surge Current Fig.3 Typical Instantaneous Forward Characteristics Fig.5 Typical Junction Capacitance 2 www.kexin.com.cn Fig.4 Typical Reverse Characteristics Fig.6 Typical Transient Thermal Impedance