1N5819WS

S MD Type Schottky Barrier Diodes 1N5817WS-1N5819WS SOD-323 +0.1 1.7-0.1 Diodes Unit: mm Features For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. +0.1 2.6-0.1 +0.05 0.3-0.05 +0.05 0.85-0.05 1.0max 0.475 0.375 Absolute Maximum Ratings Ta = 25 Parameter Non-Repetitive Peak reverse voltage Peak repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Peak forward surge current @=8.3ms Repetitive Peak Forward Current Power Dissipation Thermal Resistance Junction to Ambient Storage temperature Symbol VRM VRRM VRWM VR VR(RMS) IO IFSM IFRM Pd R JA 1N5817WS 20 20 14 1N5818WS 30 30 21 1 25 625 250 500 -65 to 150 1N5819WS 40 40 28 Unit V V V A A mA mW K/W TSTG Electrical Characteristics Ta = 25 Parameter 1N5817WS Reverse breakdown voltage 1N5818WS 1N5819WS Reverse voltage leakage current 1N5817WS 1N5818WS 1N5819WS 1N5817WS Forward voltage 1N5818WS 1N5819WS Diode capacitance CD VF IR VR=20V VR=30V VR=40V IF=1A IF=3A IF=1A IF=3A IF=1A IF=3A VR=4V, f=1MHz V(BR) IR= 1mA Symbol Testconditons Min 20 30 40 1 0.45 0.75 0.55 0.875 0.6 0.9 120 mA Typ Max Unit V +0.05 0.1-0.02 V V V pF Marking NO. Marking 1N5817WS SJ 1N5818WS SK 1N5819WS SL +0.1 1.3-0.1 www.kexin.com.cn 1 S MD Type 1N5817WS-1N5819WS Typical Characteristics Diodes Fig.1 Forward Current Derating Curve Fig.2 Maximum Non-Repetitive Peak Forward Surge Current Fig.3 Typical Instantaneous Forward Characteristics Fig.4 Typical Reverse Characteristics Fig.5 Typical Junction Capacitance Fig.6 Typical Transient Thermal Impedance 2 www.kexin.com.cn