1PS59SB10

S MD Type Schottky Barrier (Double) Diodes 1PS59SB Series Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Low forward voltage Guard ring protoected Small SMD package. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forwrad current Total power dissipation (per package) Storage temperature Junction temperature Symbol VR IF IFSM IFSM Ptot Tstg Tj tp tp Tamb 1s; ä 0.5 Conditions Min Max 30 200 300 600 250 -65 +150 125 Unit V mA mA mA mW 10 ms 25 Electrical Characteristics Ta = 25 Parameter Symbol Conditions IF = 0.1 mA IF = 1 mA forward voltage VF IF = 10 mA IF = 30 mA IF = 100 mA reverse current IR VR = 25 V when switched from IF = 10 mA to reverse recovery time trr IR = 10 mA; RL = 100 measured at IR = 1 mA diode capacitance thermal resistance from junction to ambient Cd Rth j-a f = 1 MHz; VR = 1 V 10 500 pF K/W 5 ns Max 240 320 400 500 800 2 A mV Unit Marking Type Marking 1PS59SB10 10 1PS59SB14 14 1PS59SB15 15 1PS59SB16 16 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1