1PS70SB10

S MD Type Schottky barrier (double) diodes 1PS70SB10; 1PS70SB14 1PS70SB15; 1PS70SB16 Diodes Features Low forward voltage Guard ring protected Very small plastic SMD package Absolute Maximum Ratings Ta = 25 Parameter Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forward current Total power dissipation (per package) Storage temperature Junction temperature Operating ambient temperature thermal resistance from junction to ambient Symbol VR IF IFRM IFSM Pt ot Tstg Tj Ta mb Rth j-a -65 tp 1s, ä tp < 10 ms Ta mb < 25 -65 0.5 Conditions Min Max 30 200 300 600 200 +150 125 +125 625 K/W Unit V mA mA mA mW Electrical Characteristics Ta = 25 Parameter Symbol Conditions IF = 0.1 mA IF = 1 mA Continuous forward voltage VF IF = 10 mA IF = 30 mA IF = 100 mA Reverse current Diode capacitance Note 1. Pulse test: tp < 300 s; 0.02. IR Cd V R = 25 V, Note 1 V R = 0 V; f = 1 MHz 2 10 Min Max 240 320 400 500 800 15 50 Unit mV mV mV mV mV A pF Marking Type Marking 1PS70SB10 1PS70SB14 1PS70SB15 1PS70SB16 7*0 7*4 7*5 7*6 www.kexin.com.cn 1