1PS76SB70

S MD Type Schottky barrier Diodes 1PS76SB70 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm Low forward volatge Guard ring protected Very small plastic SMD package Low diode capacitance. +0.05 0.1-0.02 +0.1 2.6-0.1 1.0max 0.475 0.375 Absolute Maximum Ratings Ta = 25 PARAMATER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature SYMBOL VR IF IFRM IFSM Tstg Tj Tamb -65 tp 1 s; ä tp < 10 ms -65 0.5 CONDITIONS MIN MAX 70 70 70 100 +150 150 +150 UNIT V mA mA mA E lectrical C haracteristics T a = 25 PARAMATER SYMBOL C O N D IT IO N S IF = 1 m A continuous forward voltage VF I F = 10 m A I F = 40 m A continuous reverse current diode capacitance therm al resistance from junction to am bient N ote: 1.P ulse test: tp = 300 s; ä = 0.02. IR Cd R thj-a V R = 50 V ; note 1 V R = 70 V ; note 1 VR = 0 V; f = MHz MAX 410 750 1 100 10 5 450 U N IT mV mV V A A pF K /W Marking Marking S2 +0.1 1.3-0.1 Features +0.05 0.3-0.05 +0.05 0.85-0.05 www.kexin.com.cn 1