1PS79SB10

S MD Type Schottky Barrier Diode 1PS79SB10 SOD-523 Diodes Unit: mm +0.05 0.3-0.05 +0.1 0.6-0.1 Features Guard ring protected Ultra small plastic SMD package. +0.05 0.8-0.05 1.2 + +0.1 -0.1 Low forward voltage - +0.1 1.6-0.1 0.77max 0.07max Absolute Maximum Ratings Ta = 25 Parameter continuous reverse voltage continuous forward current repetitive peak forward current * non-repetitive peak forward current operating ambient temperature thermal resistance from junction to ambient junction temperature storage temperature * tp 1 s; d 0.5 tp < 10 ms Symbol VR IF IFRM IFSM Tamb Rthj-a Tj Tstg Rating 30 200 300 600 -65 to 125 450 125 -65 to 150 K/W Unit V mA mA mA Electrical Characteristics Ta = 25 Parameter Symbol IF = 0.1 mA IF = 1 mA continuous forward voltage VF IF = 10 mA IF = 30 mA IF = 100 mA continuous reverse current diode capacitance * Pulsed test: tp = 300 s; = 0.02. IR Cd VR = 25 V * VR = 1 V; f = 1 MHz Testconditons Min Typ Max 240 320 400 500 800 2 10 Unit mV mV mV mV mV A pF Marking Marking F +0.05 0.1-0.02 www.kexin.com.cn 1