1PS79SB30

S MD Type Schottky barrier diode 1PS79SB30 Diodes SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 0.6-0.1 1.2 +0.1 -0.1 Features Very Low forward voltage Very Low reverse current Guard ring protected Ultra small plastic SMD package. 0.07max +0.1 1.6-0.1 +0.05 0.8-0.05 + - 0.77max Absolute Maximum Ratings Ta = 25 Parameter continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forwrad current storage temperature junction temperature operating ambient temperature Symbol VR IF IFSM IFSM Tstg Tj Tamb -65 tp 1 s;ä 0.5 Conditions Min Max 40 200 300 1 -65 +150 150 +150 Unit V mA mA A t = 8.3 ms half sinewave; JEDEC method Electrical Characteristics Ta = 25 Parameter Symbol Conditions IF = 0.1 mA IF = 1 mA forward voltage VF IF = 10 mA IF = 100 mA IF = 200 mA capacitance reverse current diods capacitance thermal resistance from junction to ambient Note 1. Pulse test: pulse width = 300 s, ä = 0.02. IR Cd Rth j-a VR = 25 V, note 1; VR = 1 V, f = 1 MHz; Typ 190 250 320 440 520 Max 220 290 360 500 600 0.5 20 450 A pF K/W mV Unit Marking Marking G1 +0.05 0.1-0.02 www.kexin.com.cn 1