1SS222

S MD Type SILICON SWITCHING DIODE 1SS222 Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Low capacitance:Ct = 4.0 pF MAX. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter clipper. +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Peak Reverse Voltage DC Reverse Voltage Peak Forward Current Average Rectified Current DC Forward Current Junction Temperature Storage Temperature Range Junction to Ambient R Symbol V RM VR IFM IO P Tj T stg Rating 70 70 300 100 100 150 -55 to + 150 0.67 /mW Unit V V mA mA mW Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions IF = 10 mA Continuous reverse voltage VF IF = 50 mA IF = 100 mA Reverse current capacitance Reverse recovery time IR Ct trr VR = 70 V VR = 0, f = 1.0 MHz IF = 10 mA,VR = 6 V, RL = 100 2.0 Min Typ 720 850 950 Max 850 1000 1200 1.0 4.0 3.0 A pF ns mV Unit Marking Marking A7 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1