1SS303

S MD Type Diodes HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS303 Features Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use. A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r P e a k R e v e rs e V o lta g e D C R e v e rs e V o lta g e S u rg e C u rre n t (1 S u rg e C u rre n t (1 s ) N o te 1 s) S ym bol V RM VR IF S M IF S M IF M IF M IO IO Tj T s tg R th ( R th ( j-a ) j-a ) R a tin g 75 50 6 .0 4 .0 450 300 150 100 150 -5 5 to + 1 5 0 1 .0 0 .8 5 U n it V V A A mA mA mA mA P e a k F o rw a rd C u rre n t N o te 1 P e a k F o rw a rd C u rre n t A v e ra g e R e c tifie d C u rre n t (N o te 1 ) A v e ra g e R e c tifie d C u rre n t J u n c tio n T e m p e ra tu re S to ra g e T e m p e ra tu re R a n g e J u n c tio n to A m b ie n t (N o te 1 ) J u n c tio n to A m b ie n t N o te 1 .B o th d io d e s lo a d e d s im u lta n e o u s ly . /m W /m W Electrical Characteristics Ta = 25 Parameter Symbol V F(1) Forward voltage V F(2) V F(3) Reverse current Capacitance Reverse recovery time IR(1) Ct trr Test Conditions IF = 1 mA IF = 50 mA IF = 100 mA V R = 50 V V R = 0, f = 1.0 MHz 2.5 Min Typ 0.72 0.88 1.0 Max 1.0 1.1 1.2 0.1 4.0 4.0 A pF ns V Unit Marking Marking A4 www.kexin.com.cn 1