S MD Type
Silicon Epitaxial Planar Type 1SS307
Diodes
Features
Low forward voltage Low reverse Current Small total capacitance :VF =1.0 V(Typ) :IR= 0.1 nA (Typ)
+0.1 2.4-0.1
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 1.3-0.1
:CT = 3.0 pF(Typ)
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Maximum (peak) reverse voltage Reverse voltage Average forward current Maximum (peak) forward current Surge current (10 ms) Power dissipation Junction Temperature Storage Temperature Symbol VRM VR IO IFM IFSM P Tj Tstg Rating 35 30 100 300 2 150 125 -55 + 125 Unit V V mA mA A mW
Electrical Characteristics Ta = 25
Parameter Forward voltage Reverse current Total capacitance Symbol VF IR CT Test Conditions IF = 100 mA VR = 30 V VR = 0, f = 1.0 MHz Min Typ 1.0 0.1 3.0 Max 1.3 10 6.0 Unit V nA pF
Marking
Marking C9
+0.1 0.38-0.1
0-0.1
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