1SS350

S MD Type Sillicon Epitaxial Schottky Barrier Diode 1SS350 Diodes SOT-23 Unit: mm Small interterminal capacitance (C=0.69pF typ). +0.1 2.4-0.1 Low forward voltage (VF=0.23V max). High breakdown voltage (VR=55V). Very small-sized package permitting the 1SS350-applied sets to be made small and slim. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e v e r s e V o lt a g e F o rw a rd C u rre n t J u n c t io n T e m p e r a t u r e S to ra g e te m p e ra tu re S ym bol VR IF Tj T s tg V a lu e 5 30 125 -5 5 to + 1 2 5 U n it V mA Electrical Characteristics Ta = 25 Param eter Forward Voltage Forward Current Reverse Current Interterm inal Capacitance Sym bol VF IF IR C Conditions IF = 1 m A V F = 0.5 V V R = 0.5 V V R = 0.2 V, f = 1 MHz 0.69 30 25 0.9 Min Typ Max 0.23 Unit V mA A pF Marking Marking BH +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1